Tokyo Electron Limited

Dai Kitagawa

Katsuyuki Koizumi

Daisuke Hayashi

Tomoyuki Takahashi

Satoru Teruuchi

Tsutomu Nagai

Hiroki Endo

Nozomu Nagashima

Suguru Sato

Shigeru Senzaki

Ryota Sakane

Koei Ito

Taisei Seguchi

There is a substrate processing apparatus comprising: a chamber including a sidewall having an opening; a substrate support disposed in the chamber; a support member disposed above the substrate support; an inner wall member having a ceiling portion disposed above the substrate support and below the support member; a contact member attached to one of the support member and the inner wall member and configured to detachably fix the inner wall member to the support member by applying a spring reaction force to the other of the support member and the inner wall member in a horizontal direction; and an actuator configured to move the inner wall member downward to release the fixing of the inner wall member to the support member.

Substrate processing apparatus and maintenance method for substrate processing apparatus

A heater power feeding mechanism for independently controlling temperatures of zones of a stage on which a substrate is placed. The respective zones of the stage include heaters. The heater power feeding mechanism includes a plurality of heater terminals configured to be connected to the heaters, a plurality of heater wires connected to the heater terminals, and an offset structure that offsets the heater wires from each other. The heater terminals are disposed on the periphery of a holding plate for holding the stage.

Heater power feeding mechanism

A heater power feeding mechanism is provided that divides a stage on which a substrate is placed into zones by using a plurality of heaters and can control a temperature of each of the zones. The heater power feeding mechanism includes a plurality of sets of heater terminals connected to any of the plurality of heaters by a segment unit when a set of the heater terminals is made one segment, a heater interconnection, and an interconnection structure configured to connect at least any of the plurality sets of the heater terminals with each other by using the heater interconnection by the segment unit.

Power feeding mechanism and method for controlling temperature of a stage

Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method.

Placing table and plasma processing apparatus

A disclosed substrate support includes a base and first and second supports. A refrigerant flow path is formed inside the base. The base has first to third regions. The first region has a circular upper surface. The second region surrounds the first region. The third region surrounds the second region. The upper surface of the first region, the upper surface of the second region, and the upper surface of the third region are flat and continuous. The first support is provided on the first region and is configured to support the substrate placed thereon. The second support is provided on the third region to surround the first support, is configured to support the edge ring placed thereon, and is separated from the first support.

Substrate support and plasma processing apparatus

A placing table on an embodiment includes a supporting member and a base. The supporting member includes a placing region provided with a heater, and an outer peripheral region surrounding the placing region. The base includes a first region supporting the placing region thereon, and a second region surrounding the first region. In the second region, through holes are formed. Wirings electrically connected to the heater passes through the through holes of the second region.

Placing table and plasma treatment apparatus

Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. Further, the plurality of protrusions is formed at a plurality of positions set at a regular interval on each of a plurality of circles set concentrically and at a regular interval around a center of the placing region. Furthermore, among the plurality of positions, a plurality of positions set on each of any two adjacent circles is set not to be positioned on the same straight line extending from the center.

Electrostatic chuck, placing table and plasma processing apparatus

Provided is a mounting table according to one aspect of the present disclosure includes: a ceramic body; a heater provided in the ceramic body; a base including a support surface that supports the ceramic body and provides a space for accommodating a temperature sensor as a space that is opened at least at the support surface side; and a heat transfer body extending between a first end provided in the ceramic body and a second end that is positioned above the space and provided closer to the space than the first end, the heat transfer body having a heat conductivity that is higher than that of the ceramic body around the heat transfer body.

Mounting table and substrate processing apparatus

A feeder-cover structure includes a power feeder including a socket and a plug fitted together, a cover structure that covers and seals the power feeder, and a supply mechanism that supplies dry air or an inert gas into the cover structure. A gap is formed between the power feeder and the cover structure such that the dry air or the inert gas is supplied through the gap into the cover structure.

Feeder-cover structure and semiconductor production apparatus

There is provided a temperature control mechanism comprising: a plurality of combinations of a heater and a thyristor, wherein at least one combination of the heater and the thyristor is provided on a zone-by-zone basis, and wherein an area of an electrostatic chuck for mounting a substrate is divided into a plurality of zones; a power supply configured to supply current to heaters of the plurality of combinations respectively through the thyristors of the plurality of combinations; a pair of filters disposed at a power supply line for supplying electric power from the power supply to the heaters and configured to eliminate high frequency power applied to the power supply.

Growing community of inventors

Miyagi, Japan

Dai Kitagawa