Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Daesung Lim

Youngchul Park

Giyong Nam

Sangtae Kim

Kyungbo Shim

Youngjun Kim

Kitae Kim

Changsoo Kim

Hongsick Park

Jonghee Park

Jinseock Kim

Beomsoo Kim

Youngjin Yoon

Jinhyung Kim

Soomin An

Inseol Kuk

Inho Yu

Jinsook Kim

Sanghoon Jang

Haccheol Kim

Byungsu Lee

Seungsoo Lee

Jungseek Jung

Jongmun Lee

Dongki Kim

Joohwan Chung

A thin film etchant composition for preventing re-adsorption of an etched metal and uniformly etching a thin film is provided. The thin film etchant composition includes about 43 wt % to about 46 wt % of phosphoric acid, about 5 wt % to about 8 wt % of nitric acid, about 10 wt % to about 17 wt % of acetic acid, about 1 wt % to about 3 wt % of iron nitrate, about 0.7 wt % to about 1.5 wt % of phosphate, and deionized water as a remaining amount based on a total weight of the thin film etchant composition.

Thin film etchant composition and method of forming metal pattern by using the same

An etchant includes: based on a total weight of the etchant, about 1 wt % to about 15 wt % of sulfurized peroxide, about 5 wt % to about 10 wt % of nitric acid, about 20 wt % to about 40 wt % of organic acid, about 0.05 wt % to about 5 wt % of ferric nitrate, about 0.1 wt % to about 5 wt % of ionic sequestrant, and 0.1 wt % to 5 wt % of corrosion inhibitor, wherein a remaining amount is deionized water.

Etchant and method of manufacturing display device by using the same

An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.

Etchant composition and method of manufacturing a thin film transistor substrate by using the same

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Iksan-si, South Korea

Daesung Lim