Stats Chippac Pte. Ltd.

Sts Semiconductor & Telecommunications Co., Ltd.

Jcet Semiconductor (shaoxing) Co., Ltd.

Stat Chippac Ltd.

DaeSik Choi

SungWon Cho

KyungHoon Lee

OhHan Kim

Jong-Woo Ha

Soo-San Park

Sang-Ho Lee

JoHyun Bae

DeokKyung Yang

DongSoo Moon

MinJung Kim

Sang Mi Park

KyuWon Lee

JoungIn Yang

JoonYoung Choi

SangMi Park

Oh Han Kim

HyungMin Lee

YiSu Park

KiYoun Jang

WonJun Ko

Byoung Wook Jang

TaeWoo Lee

Seung Won Kim

MinWook Yu

JongHo Kim

Wonll Kwon

Reza A Pagaila

In Sang Yoon

Jun Mo Koo

Taewoo Lee

HyungSang Park

BumJoon Hong

JaEun Yun

Young Jin Woo

YongHyuk Jeong

KyoungIl Huh

WonIl Kwon

HyunJin Song

Kyoungll Huh

DongSoo Moo

Junghoon Shin

Heap Hoe Kuan

Rui Huang

HanGil Shin

Ki Youn Jang

Seung Hoon Oh

Hamid Eslampour

Taeg Ki Lim

YoungJoon Kim

YeongIm Park

Yong Hee Kang

SooSan Park

Joungln Yang

DaeSup Kim

Sooyoung Lee

Jung Sell

KyungEun Kim

JaeSick Bae

A semiconductor device includes a semiconductor wafer including a plurality of first semiconductor die. An opening is formed partially through the semiconductor wafer. A plurality of second semiconductor die is disposed over a first surface of the semiconductor wafer. An encapsulant is disposed over the semiconductor wafer and into the opening leaving a second surface of the semiconductor wafer exposed. A portion of the second surface of the semiconductor wafer is removed to separate the first semiconductor die. An interconnect structure is formed over the second semiconductor die and encapsulant. A thermal interface material is deposited over the second surface of the first semiconductor die. A heat spreader is disposed over the thermal interface material. An insulating layer is formed over the first surface of the semiconductor wafer. A vertical interconnect structure is formed around the first semiconductor die. Conductive vias are formed through the first semiconductor die.

Semiconductor device and method of using partial wafer singulation for improved wafer level embedded system in package

A semiconductor device has a substrate including a recess and a peripheral portion with through conductive vias. A first semiconductor die is mounted over the substrate and within the recess. A planar heat spreader is mounted over the substrate and over the first semiconductor die. The planar heat spreader has openings around a center portion of the planar heat spreader and aligned over the peripheral portion of the substrate. A second semiconductor die is mounted over the center portion of the planar heat spreader. A third semiconductor die is mounted over the second semiconductor die. First and second pluralities of bond wires extend from the second and third semiconductor die, respectively, through the openings in the planar heat spreader to electrically connect to the through conductive vias. An encapsulant is deposited over the substrate and around the planar heat spreader.

Semiconductor device and method of forming a low profile dual-purpose shield and heat-dissipation structure

A semiconductor device includes a semiconductor die. An encapsulant is deposited over the semiconductor die. An insulating layer is formed over the encapsulant and a first surface of the semiconductor die. A semiconductor component is disposed over the insulating layer and first surface of the semiconductor die. A first interconnect structure is formed over the encapsulant and first surface of the semiconductor die to embed the semiconductor component. A conductive via is formed in the semiconductor die. A heat sink is formed over the semiconductor die. A second interconnect structure is formed over a second surface of the semiconductor die opposite the first surface. A conductive layer is formed over the semiconductor component. An opening is formed in the insulating layer.

Semiconductor device and method of forming WLCSP with semiconductor die embedded within interconnect structure

A method of manufacture of an integrated circuit packaging system includes: providing a first substrate; mounting an integrated circuit structure on the first substrate; mounting a second substrate on the integrated circuit structure; coupling a vertical chip to the first substrate and to the second substrate; and forming a package body for encapsulating the integrated circuit structure, the vertical chip, and a portion of the second substrate.

Integrated circuit packaging system with chip stacking and method of manufacture thereof

A semiconductor device has a substrate. An insulating layer is formed over a surface of the substrate. A semiconductor die is mounted over the surface of the substrate. A channel is formed in the insulating layer around the semiconductor die. An underfill material is deposited between the semiconductor die and the substrate and in the channel. A heat spreader is mounted over the semiconductor die with the heat spreader thermally connected to the substrate. A thermal interface material is formed over the semiconductor die. The underfill material is deposited between the semiconductor die and the substrate along a first edge of the semiconductor die and along a second edge of the semiconductor die opposite the first edge. The channel extends partially through the insulating layer formed over the substrate with the insulating layer maintaining coverage over the substrate within a footprint of the channel.

Semiconductor device and method of controlling warpage in semiconductor package

A semiconductor device has a semiconductor wafer with an interconnect structure formed over a first surface of the wafer. A trench is formed in a non-active area of the semiconductor wafer from the first surface partially through the semiconductor wafer. A protective coating is formed over the first surface and into the trench. A lamination tape is applied over the protective coating. A portion of a second surface of the semiconductor wafer is removed by backgrinding or wafer thinning to expose the protecting coating in the trench. A die attach film is applied over the second surface of the semiconductor wafer. A cut or modified region is formed in the die attach film under the trench using a laser. The semiconductor wafer is expanded to separate the cut or modified region of the die attach film and singulate the semiconductor wafer.

Semiconductor device and method of backgrinding and singulation of semiconductor wafer while reducing kerf shifting and protecting wafer surfaces

A semiconductor device has a substrate and insulating layer formed over a surface of the substrate. A first conductive layer is formed over the surface of the substrate. A second conductive layer is formed over an opposing surface of the substrate. A conductive via is formed through the substrate. An opening is formed in the insulating layer while leaving the first conductive layer intact. The opening narrows with a non-linear side or linear side. The opening can have a rectangular shape. A semiconductor die is mounted over the surface of the substrate. An underfill material is deposited between the semiconductor die and substrate. The opening in the insulating layer reduces a flow rate of the underfill material proximate to the opening. The flow rate of the underfill material proximate to the opening is substantially equal to a flow rate of the underfill material away from the opening.

Semiconductor device and method of depositing underfill material with uniform flow rate

A semiconductor device has an interposer with a die attach area interior to the interposer and cover attach area outside the die attach area. A channel is formed into a surface of the interposer within the cover attach area. A dam material is formed over the surface of the interposer within the cover attach area between the channel and edge of the interposer. A semiconductor die is mounted to the die attach area of the interposer. An adhesive material is deposited in the cover attach area away from the channel and dam material. A cover, such as a heat spreader or shielding layer, is mounted to the die and interposer within the cover attach area. The cover presses the adhesive material into the channel and against the dam material to control outward flow of the adhesive material. Alternatively, ACF can be formed over the interposer to mount the cover.

Semiconductor device and method of mounting cover to semiconductor die and interposer with adhesive material

A semiconductor device has a substrate and first conductive pads formed over the substrate. An interconnect surface area of the first conductive pads is expanded by forming a plurality of recesses into the first conductive pads. The recesses can be an arrangement of concentric rings, arrangement of circular recesses, or arrangement of parallel linear trenches. Alternatively, the interconnect surface area of the first conductive pads is expanded by forming a second conductive pad over the first conductive pad. A semiconductor die has a plurality of interconnect structures formed over a surface of the semiconductor die. The semiconductor die is mounted to the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structure to the first conductive pads. A mold underfill material is deposited between the semiconductor die and substrate.

Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties

An integrated circuit packaging system includes: providing a base substrate; applying a molded under-fill on the base substrate; forming a substrate contact extender through the molded under-fill and in direct contact with the base substrate; mounting a stack device over the molded under-fill; attaching a coupling connector from the substrate contact extender to the stack device; and forming a base encapsulation on the stack device, the substrate contact extender, and encapsulating the coupling connector.

Integrated circuit packaging system with package stacking

A semiconductor device has a first semiconductor wafer mounted to a carrier. A second semiconductor wafer is mounted to the first semiconductor wafer. The first and second semiconductor wafers are singulated to separate stacked first and second semiconductor die. A peripheral region between the stacked semiconductor die is expanded. A conductive layer is formed over the carrier between the stacked semiconductor die. Alternatively, a conductive via is formed partially through the carrier. A bond wire is formed between contact pads on the second semiconductor die and the conductive layer or conductive via. An encapsulant is deposited over the stacked semiconductor die, bond wire, and carrier. The carrier is removed to expose the conductive layer or conductive via and contact pads on the first semiconductor die. Bumps are formed directly on the conductive layer and contact pads on the first semiconductor die.

Semiconductor device and method of forming POP with stacked semiconductor die and bumps formed directly on the lower die

A semiconductor device has a semiconductor die mounted to a substrate. A leadframe has a base plate and integrated tie bars and conductive bodies. The tie bars include a down step with an angled surface and horizontal surface between the conductive bodies. The leadframe is mounted to the semiconductor die and substrate with the base plate disposed on a back surface of the semiconductor die and the conductive bodies disposed around the semiconductor die and electrically connected to the substrate. An encapsulant is deposited over the substrate and semiconductor die and into the down step of the tie bars. A conductive layer is formed over the conductive bodies to inhibit oxidation. The leadframe is singulated through the encapsulant in the down step and through the horizontal portion of the tie bars to electrically isolate the conductive bodies. A semiconductor package can be mounted to the substrate and semiconductor die.

Semiconductor device and method of forming leadframe with conductive bodies for vertical electrical interconnect of semiconductor die

A semiconductor device includes a wafer level substrate having a plurality of first conductive vias formed through the wafer level substrate. A first semiconductor die is mounted to the wafer level substrate. A first surface of the first semiconductor die includes contact pads oriented toward a first surface of the wafer level substrate. A first encapsulant is deposited over the first semiconductor die. A second semiconductor die is mounted to the wafer level substrate. A first surface of the second semiconductor die includes contact pads oriented toward a second surface of the wafer level substrate opposite the first surface of the wafer level substrate. A second encapsulant is deposited over the second semiconductor die. A plurality of bumps is formed over the plurality of first conductive vias. A second conductive via can be formed through the first encapsulant and connected to the first conductive via. The semiconductor packages are stackable.

Semiconductor package and method of mounting semiconductor die to opposite sides of TSV substrate

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Seoul, South Korea

DaeSik Choi