Applied Materials, Inc.

Daemian Raj Benjamin Raj

Shailendra Srivastava

Nikhil Sudhindrarao Jorapur

Juan Carlos Rocha-Alvarez

Xinhai Han

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Deenesh Padhi

Kristopher R Enslow

Zheng John Ye

Masaki Ogata

Wenjiao Wang

Abhigyan Keshri

Amit Kumar Bansal

Dmitry A Dzilno

Syed A Alam

Ganesh Balasubramanian

Yue Chen

Zhijun Jiang

Juan Carlos Rocha

Allison Yau

Ndanka O Mukuti

Chuan Ying Wang

Li-Qun Xia

Jian Li

Tza-Jing Gung

Edward P Hammond

Jonghoon Baek

Hang Yu

Mayur G Kulkarni

Sanjay G Kamath

Hidehiro Kojiri

Xiaopu Li

Madhu Santosh Kumar Mutyala

Akshay Dhanakshirur

Vu Ngoc Tran Nguyen

Liliya Krivulina

Ryan T Downey

Arkajit Roy Barman

Mingle Tong

Qiang Ma

Peter Standish

Kesong Hu

Kiran Garikipati

Saketh Pemmasani

Rana Howlader

Robert Casanova

Kurt R Langeland

Miguel S Fung

Uwe P Haller

Thian Choi Lim

Zakaria Ibrahimi

Collen Leng

Bharath Kumar Hanchanoor Rathnakara Gowda

Jose Angelo Olave

Exemplary semiconductor processing systems may include a gas source coupled with a number of processing chambers. The gas source may include a controller. Each chamber may include an exhaust assembly having a foreline and a pump. The systems may include at least one abatement system coupled with each pump. The systems may include a plurality of exhaust lines that extend between each pump and the abatement system. The systems may include a dilution gas source coupled with each exhaust line. The systems may include a mass flow controller coupled between the dilution gas source and each exhaust line. The systems may include a temperature sensor coupled with each exhaust line between the pump and the abatement system. The temperature sensor may be communicatively coupled with the controller of the gas source, which may control flow of a gas to a chamber based on a measurement from the temperature sensor.

Interlock system for processing chamber exhaust assembly

Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a substrate support disposed within the chamber body. The substrate support may define a substrate support surface. The chambers may include a showerhead positioned supported atop the chamber body. The substrate support and a bottom surface of the showerhead may at least partially define a processing region within the semiconductor processing chamber. The showerhead may define a plurality of apertures through the showerhead. The bottom surface of the showerhead may define an annular groove or ridge that is positioned directly above at least a portion of the substrate support.

Shaped showerhead for edge plasma modulation

Exemplary modular gas blocks may include a body having inlet and outlet ends. The body may define a portion of a first gas path along a length of the body and may define a second gas path along a width of the body. The first gas path may include channel segments defined within the body. The inlet end may define a gas inlet that is coupled with the first gas path. The body may define first fluid ports that are coupled with the first gas path. A fluid port of the first fluid ports may be coupled with the gas inlet. The first fluid ports may be coupled with one another via a respective channel segment. An upper surface may define a lateral fluid port that is spaced apart from a first fluid port along the width and is coupled with the first fluid port via the second gas path.

Modular multi-directional gas mixing block

In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

Dynamic multi zone flow control for a processing system

A faceplate for a substrate process chamber comprises a first and second surface. The second surface is shaped such that the second surface includes a peak and a distance between the first and second surface varies across the width of the faceplate. The second surface of the faceplate is exposed to a processing volume of the process chamber. Further, the faceplate may be part of a lid assembly for the process chamber. The lid assembly may include a blocker plate facing the first surface of the faceplate. A distance between the blocker plate and the first surface is constant.

Faceplate having a curved surface

Exemplary semiconductor processing systems may include a processing chamber including a lid stack having an output manifold. The systems may include a gas panel. The systems may include an input manifold. The input manifold may fluidly couple the gas panel with the output manifold of the processing chamber. A delivery line may extend from the input manifold to the output manifold. The systems may include a first transmission line extending from a first set of precursor sources of the gas panel to the delivery line. The systems may include a second transmission line extending from a second set of precursor sources of the gas panel to the delivery line. The second transmission line may be switchably coupled between the delivery line and an exhaust of the semiconductor processing system.

Switchable delivery for semiconductor processing system

A method and apparatus for controlling RF plasma attributes is disclosed. Some embodiments of the disclosure provide RF sensors within processing chambers operable at high temperatures. Some embodiments provide methods of measuring RF plasma attributes using RF sensors within a processing chamber to provide feedback control for an RF generator.

Methods and apparatus for controlling RF parameters at multiple frequencies

A fluid delivery device is disclosed. The fluid delivery device includes a fluid flow meter. The fluid flow meter is enclosed in an insulated box. An intake is provided on the insulated box for providing a forced cooling gas flow over the fluid flow meter. An exhaust is provided on the insulated box from which the forced cooling gas exits the insulated box.

Thermally stable flow meters for precision fluid delivery

Exemplary semiconductor processing systems may include a processing chamber and an electrostatic chuck disposed at least partially within the processing chamber. The electrostatic chuck may include at least one electrode and a heater. A semiconductor processing system may include a power supply to provide a signal to the electrode to provide electrostatic force to secure a substrate to the electrostatic chuck. The system may also include a filter communicatively coupled between the power supply and the electrode. The filter is configured to remove or reduce noise introduced into the chucking signal by operating the heater while the electrostatic force on the substrate is maintained. The filter may include active circuitry, passive circuitry, or both, and may include an adjustment circuit to set the gain of the filter so that an output signal level from the filter corresponds to an input signal level for the filter.

Power supply signal conditioning for an electrostatic chuck

Exemplary support assemblies may include an electrostatic chuck body defining a substrate support surface. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a heater embedded within the electrostatic chuck body. The assemblies may also include an electrode embedded within the electrostatic chuck body between the heater and the substrate support surface. The substrate support assemblies may be characterized by a leakage current through the electrostatic chuck body of less than or about 4 mA at a temperature of greater than or about 500&#xb0; C. and a voltage of greater than or about 600 V.

Semiconductor substrate supports with improved high temperature chucking

Exemplary semiconductor processing chambers may include a gasbox characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel extending about the central aperture. The annular channel may be fluidly accessible from the first surface of the gasbox. The gasbox may further define a plurality of outlet apertures extending from the annular channel through the second surface of the gasbox.

Multizone flow gasbox for processing chamber

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Fremont, CA, United States of America

Daemian Raj Benjamin Raj