Samsung Electronics Co., Ltd.

Daebeom Lee

Juho Lee

Junghyun Cho

Jaewon Jeong

A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency.

Plasma processing system

Plasma processing system, method of controlling plasma in the plasma processing system, and method of manufacturing semiconductor device by using the method of controlling the plasma

Growing community of inventors

Chungcheongbuk-do, South Korea

Daebeom Lee