International Business Machines Corporation

Dae-Young Jung

Mukta G Farooq

Robert Hannon

Ian D Melville

Christopher David Muzzy

Norman Jay Rohrer

Stephen Edward Greco

Erik L Hedberg

Paul Stephen McLaughlin

Jean E Wynne

A method of assembling a microelectronic flip-chip arrangement includes attaching a chip having a defined length to a supporting substrate, wherein the chip forms a chip shadow line of the defined length on the supporting substrate, creating a first non-wettable zone on an outer portion of the bottom surface of the chip, creating a second non-wettable zone on a portion of the supporting substrate outside the chip shadow line, underfilling the chip and forming a fillet, wherein the fillet does not extend beyond the chip shadow line, and hardening the underfill including the fillet.

Method and structure to reduce cracking in flip chip underfill

The present invention relates to a laser fuse structure for high power applications. Specifically, the laser fuse structure of the present invention comprises first and second conductive supporting elements (), at least one conductive fusible link (), first and second connection elements (), and first and second metal lines (). The conductive supporting elements (), the conductive fusible link (), and the metal lines () are located at a first metal level (), while the connect elements () are located at a second, different metal level () and are connected to the conductive supporting elements () and the metal lines () by conductive via stacks () that extend between the first and second metal levels ().

Laser fuse structures for high power applications

The invention is directed to an improved semiconductor chip that reduces crack initiation and propagation into the active area of a semiconductor chip. A semiconductor wafer includes dicing channels that separate semiconductor chips and holes through a portion of a semiconductor chip, which are located at the intersection of the dicing channels. Once diced from the semiconductor wafer, semiconductor chips are created without ninety degree angle corners.

Semiconductor chip shape alteration

Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip.

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Vestal, NY, United States of America

Dae-Young Jung