Intel Corporation

Dae-Woo Kim

Sujit Sharan

Sairam Agraharam

Kemal Aygun

Arnab Sarkar

Zhiguo Qian

Ajay Jain

Neha M Patel

Rodrick J Hendricks

Ravindranath Vithal Mahajan

Yidnekachew S Mekonnen

Joseph W Parks, Jr

Ethan Caughey

Mark W Dryfuse

Jackie C Preciado

J Daniel Bryan

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having a lower insulating layer disposed thereon. The substrate has a perimeter. A metallization structure is disposed on the lower insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. First and second pluralities of conductive pads are disposed in a plane above the metallization structure. Conductive routing of the metallization structure electrically connects the first plurality of conductive pads with the second plurality of conductive pads. An upper insulating layer is disposed on the first and second pluralities of conductive pads. The upper insulating layer has a perimeter substantially the same as the perimeter of the substrate.

Alternative surfaces for conductive pad layers of silicon bridges for semiconductor packages

Metal-free frame designs for silicon bridges for semiconductor packages and the resulting silicon bridges and semiconductor packages are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon, the substrate having a perimeter. A metallization structure is disposed on the insulating layer, the metallization structure including conductive routing disposed in a dielectric material stack. A first metal guard ring is disposed in the dielectric material stack and surrounds the conductive routing. A second metal guard ring is disposed in the dielectric material stack and surrounds the first metal guard ring. A metal-free region of the dielectric material stack surrounds the second metal guard ring. The metal-free region is disposed adjacent to the second metal guard ring and adjacent to the perimeter of the substrate.

Metal-free frame design for silicon bridges for semiconductor packages

Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure incudes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

Guard ring design enabling in-line testing of silicon bridges for semiconductor packages

An integrated circuit package is disclosed. The integrated circuit package comprises a first integrated circuit die and a second integrated circuit die. The integrated circuit package further includes a substrate, wherein both the first integrated circuit die and the second integrated circuit die are connected to the substrate. The substrate includes an interconnect bridge embedded within the substrate, wherein the interconnect bridge includes at least one metal trace component, wherein the metal trace component includes rounded corners on a bottom portion of the metal trace component.

Rounded metal trace corner for stress reduction

Embedded Multi-die Interconnect Bridge (EMIB) technology provides a bridge die, where the EMIB includes multiple signal and power routing layers. The EMIB eliminates the need for TSVs required by the SIP assembly silicon interposers. In an embodiment, the EMIB includes at least one copper pad. The copper pad may be configured to protect the EMIB during wafer thinning. The copper pad may be connected to another copper pad to provide signal routing, thereby increasing the signal contact density. The copper pad may be configured to provide an increased power delivery to one or more connected dies.

EMIB copper layer for signal and power routing

Guard ring designs enabling in-line testing of silicon bridges for semiconductor packages, and the resulting silicon bridges and semiconductor packages, are described. In an example, a semiconductor structure includes a substrate having an insulating layer disposed thereon. A metallization structure is disposed on the insulating layer. The metallization structure includes conductive routing disposed in a dielectric material stack. The semiconductor structure also includes a first metal guard ring disposed in the dielectric material stack and surrounding the conductive routing. The first metal guard ring includes a plurality of individual guard ring segments. The semiconductor structure also includes a second metal guard ring disposed in the dielectric material stack and surrounding the first metal guard ring. Electrical testing features are disposed in the dielectric material stack, between the first metal guard ring and the second metal guard ring.

A microelectronic package bridge can comprising a plurality of ground layers, and a plurality of signal layers interwoven with the plurality of ground layers. Each of the signal layers can include a plurality of electrically conductive pathways. Each of the electrically conductive pathways can be arranged to form an electrical connection between one of a first plurality of bumps of a first die and one of a second plurality of bumps of a second die. Each of the plurality of electrically conductive pathways can have a length substantially equal to one another.

Bridge die design for high bandwidth memory interface

A package assembly includes a substrate extending from a first substrate end to a second substrate end. A plurality of conductive traces extend along the substrate. A plurality of contacts are coupled with the respective conductive traces of the plurality of conductive traces. Each of the contacts of the plurality of contacts includes a contact pad coupled with a respective conductive trace of the plurality of conductive traces, and a contact post coupled with the contact pad, the contact post extends from the contact pad. A package cover layer is coupled over the plurality of contact posts. The plurality of contact posts are configured to penetrate the package cover layer and extend to a raised location above the package cover layer.

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Phoenix, AZ, United States of America

Dae-Woo Kim