Samsung Electronics Co., Ltd.

Dae-lok Bae

Pil-Kyu Kang

Gil-heyun Choi

Byung-Lyul Park

Kwang-jin Moon

Yoon-Dong Park

Jung-ho Kim

Jong-Wook Lee

Deok-Young Jung

Dong-chan Lim

Seung-woo Choi

Jung-Chak Ahn

Suk-Pil Kim

June-mo Koo

Jong-myeong Lee

Chang-rok Moon

Sang-Jun Choi

Chris Hong

Bo-un Yoon

Ki-Nam Kim

Chang-ki Hong

Kyoung-ho Ha

Kyoung-won Na

Dong-jae Shin

Suk-Hun Choi

Seong-gu Kim

Hoon-sang Oh

Sung-Dong Suh

In-sung Joe

Ho-Chul Ji

Jong-Heun Lim

Yong-woo Hyung

Dong-Kak Lee

Byung-Iyul Park

Seong-Kyu Yun

Jin-kwon Bok

Hoon-Sang Oh

A semiconductor device includes a via structure and a conductive structure. The via structure has a surface with a planar portion and a protrusion portion. The conductive structure is formed over at least part of the planar portion and not over at least part of the protrusion portion of the via structure. For example, the conductive structure is formed only onto the planar portion and not onto any of the protrusion portion for forming high quality connection between the conductive structure and the via structure.

Semiconductor device and method of fabricating the same

A semiconductor device includes a via structure having a top surface with a planar portion and a protrusion portion that is surrounded by the planar portion, and includes a conductive structure including a plurality of conductive lines contacting at least a part of the top surface of the via structure.

Semiconductor devices having an optical transceiver include a cladding on a substrate, a protrusion vertically extending trough the cladding and materially in continuity with the substrate, and a coupler on the cladding and the protrusion.

Semiconductor devices having optical transceiver

An image sensor includes a first substrate including a driving element, a first insulation layer on the first substrate and on the driving element, a second substrate including a photoelectric conversion element, and a second insulation layer on the second substrate and on the photoelectric conversion element. A surface of the second insulation layer is on an upper surface of the first insulation layer. The image sensor includes a conductive connector penetrating the second insulation layer and a portion of the first insulation layer. Methods of forming image sensors are also disclosed.

Image sensors

Optical input/output (I/O) devices, which include a substrate including a trench, a waveguide within the trench of the substrate; and a photodetector within the trench and optically connected to the waveguide. An upper surface of the photodetector is at a same level as an upper surface of the waveguide.

Buried-type optical input/output devices and methods of manufacturing the same

Optical waveguide and coupler devices and methods include a trench formed in a bulk semiconductor substrate, for example, a bulk silicon substrate. A bottom cladding layer is formed in the trench, and a core region is formed on the bottom cladding layer. A reflective element, such as a distributed Bragg reflector can be formed under the coupler device and/or the waveguide device. Because the optical devices are integrated in a bulk substrate, they can be readily integrated with other devices on a chip or die in accordance with silicon photonics technology. Specifically, for example, the optical devices can be integrated in a DRAM memory circuit chip die.

Optical waveguide and coupler apparatus and method of manufacturing the same

A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions.

Methods of selectively forming silicon-on-insulator structures using selective expitaxial growth process

Image sensors and methods of manufacturing image sensors

A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.

Method for forming light guide layer in semiconductor substrate

A conductive layer buried-type substrate is disclosed. The substrate includes a silicon oxidation layer bonded to a supporting substrate, an adhesion promotion layer that is formed on the silicon oxidation layer and improves an adhesion between the silicon oxidation layer and a conductive layer, wherein the conductive layer is formed on the adhesion promotion layer and comprises a metal layer, and a single crystal semiconductor layer formed on the conductive layer.

Conductive layer buried-type substrate, method of forming the conductive layer buried-type substrate, and method of fabricating semiconductor device using the conductive layer buried-type substrate

A wafer temporary bonding method using silicon direct bonding (SDB) may include preparing a carrier wafer and a device wafer, adjusting roughness of a surface of the carrier wafer, and combining the carrier wafer and the device wafer using the SDB. Because the method uses SDB, instead of an adhesive layer, for a temporary bonding process, a module or process to generate and remove an adhesive is unnecessary. Also, a defect in a subsequent process, for example, a back-grinding process, due to irregularity of the adhesive may be prevented.

Wafer temporary bonding method using silicon direct bonding

A method of manufacturing a buried wiring type substrate comprises implanting hydrogen ions into a single crystalline substrate through a first surface thereof to form an ion implantation region, forming a conductive layer comprising a metal on the first surface of the single crystalline substrate, forming an insulation layer comprising silicon oxide on the conductive layer, bonding the insulation layer to a support substrate to form a preliminary buried wiring type substrate, and separating the single crystalline substrate at the ion implantation region to form a single crystalline semiconductor layer on the conductive layer.

Methods of manufacturing buried wiring type substrate and semiconductor device incorporating buried wiring type substrate

Microelectronic packages are fabricated by stacking integrated circuits upon one another. Each integrated circuit includes a semiconductor layer having microelectronic devices and a wiring layer on the semiconductor layer having wiring that selectively interconnects the microelectronic devices. After stacking, a via is formed that extends through at least two of the integrated circuits that are stacked upon one another. Then, the via is filled with conductive material that selectively electrically contacts the wiring. Related microelectronic packages are also described.

Stacked integrated circuit package having recessed sidewalls

Stacked integrated circuit packages that include monolithic conductive vias

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Seoul, South Korea

Dae-lok Bae