Lam Research Corporation

Dae J Lim

Hong Shih

Chun Yan

Tuochuan Huang

Robert Charatan

Jerome S Hubacek

Enrico Magni

Catherine Zhou

Daxing Ren

Peter Norton

Bi Ming Yen

Dougyong Sung

Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Methods for silicon electrode assembly etch rate and etch uniformity recovery

Apparatus and methods are disclosed that promote greater polishing uniformity in linear CMP systems by introducing a relative lateral motion between a CMP belt and a rotating polish head securing a wafer. A belt polish module comprises a linear CMP belt forming a loop around an idle roller and a drive roller, first and second pistons engaging, respectively, first and second ends of the idle roller, and a controller configured to vary the forces applied by the first and second pistons to the ends of the idle roller in order to laterally translate the linear CMP belt. A method for linear CMP comprises rotating a wafer about a vertical axis, contacting the rotating wafer against a linear CMP belt moving in a longitudinal direction, and causing a relative lateral motion between the rotating wafer and the linear CMP belt.

Relative lateral motion in linear CMP

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Fremont, CA, United States of America

Dae J Lim