K. C. Tech Co., Ltd.

Iucf-Hyu

Dae Hyung Kim

Yong Kim

Ho Saeng Kim

Hyun Ku Park

Un Gyu Paik

Jae Hyun Jeon

Seok Min Hong

Jae Gun Park

Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.

Polishing slurry, method of producing same, and method of polishing substrate

Growing community of inventors

Gyeonggi-do, South Korea

Dae Hyung Kim