Korea Research Institute of Chemical Technology

Dongbu Electronics, Co. Ltd.

Dae Heok Kwon

Jae Seung Lee

Hee Young Kim

Yong Mann Song

Jong Y Jeon

Kang M Lee

Dong Soon Park

Sung Wuk Kim

Jae Suk Lee

A method of cleaning a silicon nitride layer on a substrate is provided to effectively remove negative-charged impurities such as polymer and particle from the silicon nitride layer. In the method, the zeta potential of the silicon nitride layer is changed from positive to negative, and then the silicon nitride layer is cleaned with a first solution selected from an alkali solution and an NC-2 solution. So the negatively-charged impurities can be easily removed due to a repulsion force. The substrate can be treated with spin scrubber or quick dump rinse before and/or after the changing of the zeta potential. To change the zeta potential, the substrate can be dipped into a second solution such as an SC-1 solution, an NC-2 solution, and an alkali solution.

Method of cleaning silicon nitride layer

After a trench is formed into a substrate, a polysilicon layer is formed on sidewalls and a bottom of the trench. A thermal oxidation is performed on the polysilicon layer such that a polysilicon oxide layer is formed thereon. Then, a portion of the polysilicon oxide layer is removed such that the polysilicon layer is exposed on the bottom of the trench while the sidewalls of the trench are still covered by the polysilicon oxide layer. A TEOS-ozone oxide layer is deposited on the substrate to fill the trench. Since the bottom of the trench has a better condition for the deposition of TEOS-ozone oxide layer than that of the sidewalls, a gap fill quality can be enhanced.

Method of shallow trench isolation

An improved reactor for a high-temperature deposition reaction on seed particles is constructed with a fluidized bed which is divided into a heating zone and a reaction zone by a partition. Seed particles in the heating zone are fluidized by a carrier gas and are heated by microwaves. On the other hand, the reaction zone for the deposition reaction, through which reaction gases pass, is heated by particle mixing between the reaction zone and the upper section of the heating zone. Subsequently, a desired reaction temperature at the reaction zone is maintained stable without deteriorating the microwave heating of the heating zone.

Fluidized bed reactor heated by microwaves

An improved method is provided for the deposition of high-purity silicon on silicon particles from silicon source gases in a fluidized bed reactor which is divided into a heating zone and a reaction zone by a partition. Silicon particles in the heating zone are fluidized by a carrier gas such as hydrogen and are heated by microwaves. On the other hand, the reaction zone for the deposition of silicon, through which reaction gases including the silicon source pass, is heated by particle mixing between the reaction zone and the upper section of the heating zone. Subsequently, a desired reaction temperature at the reaction zone is maintained stable without deteriorating the microwave heating of the heating zone.

Heating of fluidized bed reactor by microwaves

A jet pulverizing method is described for preparing silicon seed particles from silicon feed particles without contamination. The method comprises accelerating silicon feed particles by fluid jet energy and colliding them with each other within a pulverizing chamber to fracture or split them into small particles which are recovered for use as seed particles. The method is characterized by the technique that silicon particles fluidized within the pulverizing chamber are formed into a dilute-phase fluidized bed with low particle density. Thus, the generation of fine powders may be suppressed and additional sieving to separate larger particles is not required.

Growing community of inventors

Daejeon, South Korea

Dae Heok Kwon