Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Da-Ming Zhuang

Ming Zhao

Li Hui Guo

Ming-Jie Cao

Yao-Wei Wei

Ze-Dong Gao

Liang-Qi Ouyang

Shi-Lu Zhan

Xiao-Long Li

Leng Zhang

Ru-Jun Sun

A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5&#x2dc;2. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10&#x3a9;cm to about 10 &#x3a9;cm. A weight percentage of crystalline InCeZnOin the sputtering target is larger than 80%.

Sputtering target

A sputtering target includes an indium cerium zinc oxide represented by InCeZnO, wherein x=0.5&#x2dc;2. A method for making a sputtering target includes steps of: mixing indium oxide (InO) powder, cerium oxide (CeO) powder, and zinc oxide (ZnO) powder to form a mixture, a molar ratio of indium (In), cerium (Ce), and zinc (Zn) as In:Ce:Zn in the mixture is 2:(0.5 to 2):1; and sintering the mixture at a temperature in a range from about 1250&#xb0; C. to about 1650&#xb0; C.

Sputtering target and method for making the same

A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

Method for making oxide semiconductor film

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

Sputtering target, oxide semiconducting film, and method for making the same

A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2&#x3c;Sn:O&#x2266;2:1.

Method for making tin oxide thin film

A method for making a thin film transistor includes a step of forming a semiconducting layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate. A process of forming the semiconducting layer comprises a step of sputtering an oxide semiconductor film on a substrate by using a sputtering target comprising In2CexZnO4+2x, wherein x=0.5&#x2dc;2.

Method for making thim film transistor

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn), doping metal element (M) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Thim film transistor and method for making the same, thim film transistor panel and display device

An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising InCeZnO, wherein x=0.5&#x2dc;2.

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Beijing, China

Da-Ming Zhuang