United Microelectronics Corp.

Da-Bai Jiang

Ching-Shu Lo

In a monitoring method of an exposure apparatus, a top critical dimension (TCD) and a bottom critical dimension (BCD) of the test pattern formed on a photo-sensitive material layer are measured. A dose deviation (&#x394;E) and a focus deviation (&#x394;F) are calculated by following equations:TCD+BCD=&#x3b1;&#x394;+(TCD+BCD)TCD&#x2212;BCD=&#x3b2;Here, &#x3b1;, &#x3b2;and &#x3b2;are constants, &#x394;E=E&#x2212;E, &#x394;F=F&#x2212;F, E represents a real exposure dose, F represents a real exposure focus, Erepresents a dose defined when a middle critical dimension of the test pattern is equal to a predetermined value, Frepresents a focus defined when TCD of the test pattern is equal to BCD thereof, and TCDand BCDare theoretical values in case of Eand F.

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Singapore, Singapore

Da-Bai Jiang