Varian Semiconductor Equipment Associates, Inc.

Curt D Bergeron

Joseph C Olson

Russell J Low

Shengwu Chang

Daniel Distaso

Leo Klos

Eric R Cobb

Bjorn O Pedersen

Jeffrey A Burgess

Peter E Maciejowski

An indirectly heated cathode ion source includes an arc chamber housing that defines an arc chamber, an indirectly heated cathode and a filament for heating the cathode. The cathode may include an emitting portion having a front surface, a rear surface and a periphery, a support rod attached to the rear surface of the emitting portion, and a skirt extending from the periphery of the emitting portion. A cathode assembly may include the cathode, a filament and a clamp assembly for mounting the cathode and the filament in a fixed spatial relationship and for conducting electrical energy to the cathode and the filament. The filament is positioned in a cavity defined by the emitting portion and the skirt of the cathode. The ion source may include a shield for inhibiting escape of electrons and plasma from a region outside the arc chamber in proximity to the filament and the cathode.

Indirectly heated cathode ion source

A cathode system having a cathode element configured to extend through an aperture in a wall of an arc chamber of an ion implanter system. A gas flow through a spacing between the cathode element and the aperture is restricted by a restriction member. A method of ionizing a source gas and a cathode element incorporating the restriction member are also provided.

Gas flow restricting cathode system for ion implanter and related method

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Danvers, MA, United States of America

Curt D Bergeron