Kempur Microelectronics, Inc.

Cuimei Diao

Xin Chen

Bing Li

Haibo Li

Jia Sun

Roger Sinta

Xiantao Han

Provided are a novel negative chemically-amplified photoresist and an imaging method thereof. The negative chemically-amplified photoresist comprises phenol resin, a photo-acid generator, a cross-linking agent, an alkaline additive, a sensitizing agent and a photoresist solvent, wherein the phenol resin is a host material of the novel negative chemically-amplified photoresist; the photo-acid generator is capable of generating an acid with a certain strength under illumination; and the cross-linking agent can undergo a condensation reaction with a phenolic hydroxyl group or an ortho-/para-hydroxymethyl functional group. The imaging method of the novel negative chemically-amplified photoresist comprises coating, baking, exposure, baking, developing and other steps. The chemically-amplified negative photoresist of the present invention can improve the resolution and photospeed of photoresists effectively. And meanwhile, the chemically-amplified negative photoresist, for which the ancillaries used is the same as that used for positive photoresists, is applicable in the fields of manufacture of top-grade integrated circuits, flat panel displays and LED chips.

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Beijing, China

Cuimei Diao