International Business Machines Corporation

Globalfoundries Inc.

Adeia Semiconductor Bonding Technologies Inc.

Elpis Technologies Inc.

Cornelius Brown Peethala

Chih-Chao Yang

Raghuveer Reddy Patlolla

Lawrence Alfred Clevenger

Benjamin David Briggs

Koichi Motoyama

Michael Rizzolo

James John Kelly

Hari Prasad Amanapu

Hsueh-Chung Chen

Yann Mignot

David Lee Rath

Elbert Emin Huang

Hosadurga K Shobha

Gangadhara Raja Muthinti

Kedari Matam

Takeshi Nogami

Ruqiang Bao

Donald Francis Canaperi

Yongan Xu

Roger Allan Quon

Gen Tsutsui

Theo Standaert

Theodorus E Standaert

Hemanth Jagannathan

Son Van Nguyen

Su Chen Fan

Kisik Choi

John Christopher Arnold

Joe Lee

Joseph F Maniscalco

Frank Wilhelm Mont

Hao Tang

Thomas J Haigh, Jr

Shariq Siddiqui

Dominik Metzler

Prasad Bhosale

Daniel C Edelstein

Lars W Liebmann

Christopher J Penny

Baozhen Li

Rudy J Wojtecki

Oscar Van Der Straten

Ekmini Anuja De Silva

Nicholas Anthony Lanzillo

Ashim Dutta

Vimal Kumar Kamineni

Viraj Yashawant Sardesai

Spyridon Skordas

Kevin R Winstel

Kenneth Chun Kuen Cheng

Randolph F Knarr

Balasubramanian S Pranatharthi Haran

Iqbal Rashid Saraf

Matthew T Shoudy

James Jay McMahon

Abraham Arceo De La Pena

Allan Ward Upham

Noel Arellano

Devika Sil

Alexander Edward Hess

Mary Breton

Da Song

Kevin J Ryan

Nicholas V LiCausi

Sugirtha Krishnamurthy

Pavan S Chinthamanipeta

Raghuveer Patiolla

A novel bevel etch sequence for embedded metal contamination removal from BEOL wafers is provided. In one aspect, a method of processing a wafer includes: performing a bevel dry etch to break up layers of contaminants with embedded metals which, post back-end-of line metallization, are deposited on a bevel of the wafer, which forms a damaged layer on surfaces of the wafer, and then performing a sequence of wet etches, following the bevel dry etch, to render the bevel of the wafer substantially free of contaminants, wherein the sequence of wet etches includes etching the damaged layer to undercut and lift-off any remaining contaminants. A wafer, processed in this manner, having a bevel that is substantially free of contaminants is also provided.

Embedded metal contamination removal from BEOL wafers

Bottom barrier free interconnects are provided. In one aspect, an interconnect structure includes: metal lines embedded in a dielectric; an interlayer dielectric (ILD) disposed over the metal lines; interconnects formed in the ILD on top of the metal lines; a barrier layer separating the interconnects from the ILD, wherein the barrier layer is absent in between the interconnects and the metal lines; and a selective capping layer disposed on the interconnects.

Bottom barrier free interconnects without voids

A method for fabricating a planarized planarization layer for an integrated circuit device is described. A barrier layer is deposited over a planarization layer. Next, a liner layer is deposited on the barrier layer. An overburden layer is deposited on the liner layer. A first chemical mechanical polishing (CMP) process is performed on the overburden layer. A surface conversion process is performed on uncovered portions of a top surface of the planarization layer which are not protected by the polished overburden layer. A first wet etch is performed of the planarization layer. In embodiments, the first wet etch is selective to metal overburden layer as compared to the planarization layer. A second wet etch is performed removing the liner layer, the diffusion barrier layer and the metal overburden layer. In embodiments, the second wet etch is selective to the planarization layer as compared to the overburden layer.

Surface conversion in chemical mechanical polishing

Embodiments of the invention include a method of forming a multi-layer integrated circuit (IC) structure that includes forming a first dielectric layer from a first dielectric material. A first conductive interconnect is formed having a first conductive interconnect surface. The first conductive interconnect is positioned in a first portion of the first dielectric layer, and the first conductive interconnect surface has a first conductive interconnect surface area. A second conductive interconnect is formed having a second conductive interconnect surface. The second conductive interconnect is above the first conductive interconnect and positioned in a second portion of the first dielectric layer. The second conductive interconnect surface has a second conductive interconnect surface area that is less than a first conductive interconnect surface area of the first conductive interconnect. A planarization stop region is formed above the second conductive interconnect and in a third portion of the first dielectric layer.

Planarization stop region for use with low pattern density interconnects

Techniques are provided to fabricate metal interconnects using liner planarization-free process flows. A sacrificial layer is formed on a dielectric layer, and the sacrificial and dielectric layers are patterned to form an opening in the dielectric layer. A conformal liner layer is deposited, and a metal layer deposited to form a metal interconnect in the opening. An overburden portion of the metal layer is planarized to expose an overburden portion of the liner layer. A first wet etch is performed to selectively remove the overburden portion of the liner layer. A second wet etch process is performed to selectively remove the sacrificial layer, resulting in extended portions of the liner layer and the metal interconnect extending above a surface of the dielectric layer. A dielectric capping layer is formed to cover the sidewall and upper surfaces of the extended portions of the liner layer and the metal interconnect.

Metallic interconnect structures with wrap around capping layers

An apparatus that includes a solution bath of a seasoned solution, the seasoned solution containing a mixture of hydrofluoric acid, nitric acid, and acetic acid; and one or more silicon wafers being suspended in a position above the solution bath, wherein at least a portion of the mixture having been used in thinning the one or more silicon wafers.

Selective etching of silicon wafer

Chamfer-less via interconnects and techniques for fabrication thereof with a protective dielectric arch are provided. In one aspect, a method of forming an interconnect includes: forming metal lines in a first dielectric; depositing an etch stop liner onto the first dielectric; depositing a second dielectric on the etch stop liner; patterning vias and a trench in the second dielectric, wherein the vias are present over at least one of the metal lines, and wherein the patterning forms patterned portions of the second dielectric/etch stop liner over at least another one of the metal lines; forming a protective dielectric arch over the at least another one of the metal lines; and filling the vias/trench with a metal(s) to form the interconnect which, due to the protective dielectric arch, is in a non-contact position with the at least another one of the metal lines. An interconnect structure is also provided.

Adjustable via dimension and chamfer angle

Various methods and structures for fabricating BEOL metallization layer including at least one bulk cobalt contact, the at least one bulk cobalt contact including a replacement non-cobalt metal cap integral to the at least one bulk cobalt contact. The method includes performing selective deposition, by a chemical exchange reaction of metal between a non-cobalt metal and Cobalt in the at least one bulk cobalt contact, of the replacement non-cobalt metal cap integrally formed in a top surface region of the bulk cobalt contact.

Replacement metal cap by an exchange reaction

Embodiments of the present invention are directed to fabrication method and resulting structures for forming interconnects using a conductive spacer configured to prevent a short between a via and an adjacent line. In a non-limiting embodiment of the invention, a first conductive line and a second conductive line are formed in a metallization layer. A conductive spacer is formed on the first conductive line and a conductive via is formed on a surface of the conductive spacer. The conductive via is positioned such that the conductive spacer is between the first conductive line and the conductive via. A height of the conductive spacer is selected to provide a predetermined distance from the conductive via to the second conductive line. The predetermined distance from the conductive via to the second conductive line is sufficient to prevent a short between the conductive via and the second conductive line.

Interconnects having a via-to-line spacer for preventing short circuit events between a conductive via and an adjacent line

Embodiments of the invention are directed to an interconnect stack including a first dielectric layer, a first trench formed in the first dielectric layer, and a first liner deposited in the first trench, wherein the first liner defines a second trench. A first conductive material is in the second trench and deposited over the first dielectric layer and the first conductive material. A third trench extends through the second dielectric layer and is over the first conductive material. A bottom surface of the third trench includes at least a portion of the top surface of the first conductive material. A second liner is in the third trench, on sidewalls of the third trench, and also on the portion of the top surface of the first conductive material. The second liner functions as a cap region configured to counter electro-migration or surface migration of the first conductive material.

Liner and cap structures for reducing local interconnect vertical resistance without compromising reliability

A semiconductor device includes at least one mandrel including a dielectric material, and at least one non-mandrel including a hard mask material having an etch property substantially similar to that of the dielectric material.

Multiple patterning scheme integration with planarized cut patterning

A method is presented for forming a fully aligned via (FAV) structure. The method includes depositing a first dielectric adjacent a conductive material, forming a surface aligned monolayer (SAM) over the conductive material, the SAM defining a long chain SAM formed by a layer-by-layer growth technique, depositing a second dielectric over the SAM and the first dielectric, performing chemical mechanical polishing (CMP) to planarize the second dielectric, and etching the SAM to form the FAV structure.

Selective deposition with SAM for fully aligned via

Techniques to enable bottom barrier free interconnects without voids. In one aspect, a method of forming interconnects includes: forming metal lines embedded in a dielectric; depositing a sacrificial dielectric over the metal lines; patterning vias and trenches in the sacrificial dielectric down to the metal lines, with the trenches positioned over the vias; lining the vias and trenches with a barrier layer; depositing a conductor into the vias and trenches over the barrier layer to form the interconnects; forming a selective capping layer on the interconnects; removing the sacrificial dielectric in its entirety; and depositing an interlayer dielectric (ILD) to replace the sacrificial dielectric. An interconnect structure is also provided.

Interconnect structures or memory structures are provided in the BEOL in which topography variation is reduced. Reduced topography variation is achieved by providing a structure that includes a first dielectric capping layer that has a planar topmost surface and/or a second dielectric capping layer that has a planar topmost surface. The first dielectric capping layer has a non-planar bottom surface that contacts both a recessed surface of an interconnect dielectric material layer and a planar topmost surface of at least one electrically conductive structure that is embedded in the interconnect dielectric material layer.

Interconnect and memory structures having reduced topography variation formed in the BEOL

Growing community of inventors

Slingerlands, NY, United States of America

Cornelius Brown Peethala