Rohm & Haas Electronic Materials LLC

Dow Global Technolgoies LLC

Rohm and Haas Electronic Materials Korea Ltd.

Rohm and Haas Electronics Materials LLC

Dupont Electronic Materials International, LLC

Cong Liu

Cheng-Bai Xu

Mingqi Li

Irvinder Kaur

Emad Aqad

Deyan Wang

Gerhard Pohlers

Chunyi Wu

Doris H Kang

Kevin Rowell

Shintaro Yamada

Gregory P Prokopowicz

Jong Keun Park

Choong-Bong Lee

Xisen Hou

Cheng Bai Xu

George G Barclay

Anthony Zampini

Jason A DeSisto

Suzanne M Coley

Vipul Jain

Owendi Ongayi

William Williams, Iii

Thomas Cardolaccia

Stefan J Caporale

Joshua A Kaitz

Cecily Andes

Joseph Mattia

Tomas Marangoni

Sabrina Wong

Joon Seok Oh

Peter Trefonas, Iii

James F Cameron

Phillip Dene Hustad

Clark H Cummins

Matthias Stefan Ober

Seung-Hyun Lee

Huaxing Zhou

Jibin Sun

Sheng Liu

Gerald B Wayton

Amy M Kwok

Chang-Young Hong

Peng-Wei Chuang

James C Taylor

Jung Woo Kim

Thomas A Estelle

Lori Anne Joesten

Jinrong Liu

Ching-Lung Chen

Wenyan Yin

Joon-Seok Oh

Gerhard Polhers

Ke Yang

Tsutomu Asazuma

Doris Kang

Photoresist topcoat compositions, comprising: a first polymer that is aqueous base soluble and is present in an amount of from 70 to 99 wt % based on total solids of the composition; a second polymer comprising a repeat unit of general formula (IV) and a repeat unit of general formula (V): wherein: Rindependently represents H, halogen atom, C1-C3 alkyl, or C1-C3 haloalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a multivalent linking group; and m is an integer of from 1 to 5; wherein the second polymer is free of non-fluorinated side chains; and wherein the second polymer is present in an amount of from 1 to 30 wt % based on total solids of the composition and a solvent. The invention finds particular applicability in the manufacture of semiconductor devices.

Photoresist topcoat compositions and methods of processing photoresist compositions

Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Pattern formation methods

A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Photoresist compositions and pattern formation methods

Photoresist topcoat compositions comprise: a matrix polymer and a surface active polymer, wherein the surface active polymer comprises polymerized units of the following general formula (I): wherein: Rrepresents a hydrogen atom, a halogen atom, a C1-C4 alkyl group, or a C1-C4 haloalkyl group; Rindependently represents a hydrogen atom or an optionally substituted alkyl group, wherein at least one Ris not a hydrogen atom, wherein the Rgroups taken together optionally form a cyclic structure, and wherein the total number of carbon atoms for the Rgroups taken together is from 2 to 20; Rrepresents an optionally substituted C1-C4 alkylene group, wherein an Rgroup optionally forms a cyclic structure with R; and Rindependently represents C1-C4 fluoroalkyl groups; wherein the total polymerized units of general formula (I) are present in the surface active polymer in an amount of 95 wt % or more based on total polymerized units of the surface active polymer; and wherein the surface active polymer is present in the composition in an amount of from 0.1 to 30 wt % based on total solids of the composition; and an organic-based solvent system comprising a plurality of organic solvents. The invention finds particular applicability in the manufacture of semiconductor devices.

Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I),

Topcoat compositions and photolithographic methods

New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

Photoresist compositions and methods

A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1): and a solvent.

A pattern formation method, comprising: (a) providing a semiconductor substrate; (b) forming a photoresist pattern over the semiconductor substrate, wherein the photoresist pattern is formed from a photoresist composition comprising: a first polymer comprising acid labile groups; and a photoacid generator; (c) coating a pattern overcoat composition over the photoresist pattern, wherein the pattern overcoat composition comprises a second polymer and an organic solvent, wherein the organic solvent comprises one or more ester solvents, wherein the ester solvent is of the formula R&#x2014;C(O)O&#x2014;R, wherein Ris a C3-C6 alkyl group and Ris a C5-C10 alkyl group; (d) baking the coated photoresist pattern; and (e) rinsing the coated photoresist pattern with a rinsing agent to remove the second polymer. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern formation methods and photoresist pattern overcoat compositions

Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the polymer comprises polymerized units of general formulas (I) and (II): wherein: X independently represents a halogen atom; Q represents a single bond, &#x2014;O&#x2014;, or &#x2014;C(O)O&#x2014;; Rindependently represents hydrogen, a halogen atom, C1-C12 alkyl or C1-C12 fluoroalkyl; Rrepresents C1-C3 alkyl or C1-C3 fluoroalkyl; and m is an integer from 0 to 4; and wherein the polymerized units of general formula (I) are present in the polymer in an amount of 10 to 90 mol % and the polymerized units of general formula (II) are present in the polymer in an amount from 10 to 60 mol %, based on total polymerized units of the polymer. The photoresist pattern trimming compositions and their use in pattern formation methods find particular applicability in the manufacture of semiconductor devices.

Photoresist pattern trimming compositions and pattern formation methods

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that comprise one or more base reactive groups and (i) one or more polar groups distinct from the base reactive groups, and/or (ii) at least one of the base reactive groups is a non-perfluorinated base reactive group. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising base-reactive component and processes for photolithography

New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Photoresists comprising amide component

Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210&#xb0; C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Pattern-formation methods

New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm.

Polymers and photoresist compositions

Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: Rindependently represents H, F or optionally fluorinated C1 to C4 alkyl; Rrepresents linear, branched or cyclic C1 to C20 alkyl; Rrepresents linear, branched or cyclic C1 to C20 fluoroalkyl; Lrepresents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

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Shrewsbury, MA, United States of America

Cong Liu