Rohm and Haas Electronic Materials Cmp Holdings, Inc.

Clyde A Fawcett

T Todd Crkvenac

Kenneth A Prygon

Mary Jo Kulp

Andrew Scott Lawing

Bernard Foster

The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 &#x3bc;m and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, &#x3c4;, of 1 to 10 &#x3bc;m as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, Wthat is less than or equal to the value of &#x3c4;.

Chemical mechanical polishing pad

A porous polishing pad is useful for polishing semiconductor substrates. The porous polishing pad has a porous matrix formed from a coagulated polyurethane and a non-fibrous polishing layer. The non-fibrous polishing layer has a polishing surface with a pore count of at least 500 pores per mmthat decreases with removal of the polishing layer; and the polishing surface has a surface roughness Ra between 0.01 and 3 &#x3bc;m.

Growing community of inventors

Claymont, DE, United States of America

Clyde A Fawcett