Applied Materials, Inc.

Clinton Goh

Yuichi Wada

Yueh Sheng Ow

Tuck Foong Koh

Sree Rangasai V Kesapragada

Nuno Yen-Chu Chen

Felix Deng

Ananthkrishna Jupudi

Sarath Babu

Kai Liang Liew

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

Methods and apparatus for cleaving of semiconductor substrates

Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately &#x2212;50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

Methods and apparatus for high voltage electrostatic chuck protection

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Singapore, Singapore

Clinton Goh