Cadence Design Systems, Inc.

Chunyi Huang

Ru Huang

Runsheng Wang

Yanhui Li

Jushan Xie

Alvin Chen

Tianlei Guo

Shaofeng Guo

Si-Yu Liao

Zhuoqing Yu

A method, a system and a non-transitory machine-readable storage medium are provided. In one or more aspects, a computer-implemented method for bias temperature instability (BTI) calculation of a device includes simulating the device, using an electronic design automation tool. The simulation includes determining a first degradation value after applying a first sequence of stress values to the device for a first plurality of time steps. The simulation further includes determining a first degradation recovery value after the first plurality of time steps. The simulation further includes determining a first recovered degradation value after the first plurality of time steps by combining the first degradation value and the first degradation recovery value. The first degradation value, the first degradation recovery value, and the first recovered degradation value are associated with one or more model parameters of the device. The simulation is a transient analysis simulation, and the device is a FINFET or MOSFET device.

Method of bias temperature instability calculation and prediction for MOSFET and FinFET

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Beijing, China

Chunyi Huang