Merck Patent Gmbh

Az Electronic Materials USA Corp.

Az Electronic Materials (luxembourg) S.a.r.l.

Ormet Circuits, Inc.

Chunwei Chen

Weihong Liu

Ping-Hung Lu

PingHung Lu

Medhat A Toukhy

SookMee Lai

Mark O Neisser

Hong Zhuang

Aritaka Hishida

Joseph E Oberlander

Catherine A Shearer

Robert R Plass

Georg Pawlowski

Yoshiharu Sakurai

Stephen Meyer

Lei Lu

Hisashi Motobayashi

SangChul Kim

Sangchul Kim

Sookmee Lai

Pinghung Lu

Robert Plass

Disclosed herein is a photosensitive composition comprising a) at least one photoacid generator; b) at least one Novolak polymer; c) at least one acrylate polymer, comprising a component having structure (I); d) at least one glycidyl hydroxy benzoic acid condensate material comprising one or more compounds having structure (II); e) at least one heterocyclic thiol compound comprising a ring structure chosen from the general structures (III), (IIIa) or (IIIb); and f) at least one solvent. Disclose herein are also the methods of using this composition to form a resist pattern and the methods of using these resist patterns to produce metal lines. Disclosed herein are also compounds and mixtures of compounds having structure (II).

Positive working photosensitive material

The present invention relates to electrical interconnect structures formed from a lithographically defined polymer coating in conjunction with a conductive paste, and methods for forming same.

Lithographically defined electrical interconnects from conductive pastes

Describe herein is a composition comprising: an acrylic polymer comprising repeat units selected from ones having structure (1), (2), (3), (4), (5), (6), and (7) wherein these repeat units are present in said acrylic polymer in the mole % ranges as described herein; a Novolak resin having a dissolution rate in 0.26 N aqueous TMAH of at least 50 &#x212b;/sec; a diazonaphthoquinone (DNQ) photoactive compound (PAC); and an organic spin casting solvent, and a process of using said composition as a positive photoresist developable in aqueous base.

DNQ-type photoresist composition including alkali-soluble acrylic resins

A negative working, aqueous base developable, photosensitive photoresist composition and a process of using this composition to produce lithographic images, where this composition is one comprising: a) a polymer containing the four repeat units of structures (1), (2), (3), and (4), but no other types of repeat units; wherein v, x, y and z, respectively, represent the mole % of each repeat units of structures (1), (2), (3) and (4); b) a radical photo-initiator component, which is comprised of at least one radical photo initiator which is activated by a broad absorption of radiation from about 360 nm to about 440 nm; c) a crosslinker component which is either a mixture consisting of crosslinkers of structure (5), (6) and (7), or a single crosslinker of structure (8); d) a radical inhibitor component; e) an optional surfactant component; f) an optional dissolution promoter component; and g) a solvent. The invention also relates to the process of using this negative resist to produce lithographic images.

Negative-working ultra thick film photoresist

The present application for patent relates to a light-sensitive positive working photosensitive composition especially useful for imaging thick films using a composition which gives very good film uniformity and promotes a good process latitude against feature pattern collapse in patterns created upon imaging and developing of these films.

A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm. The present invention also encompasses a process comprising steps a), b) and c) The present invention also encompasses a process comprising steps a'), b&#x2032;) c&#x2032;) and d&#x2032;)

Negative-working photoresist compositions for laser ablation and use thereof

The invention relates to a novel positive working photosensitive composition having: at least one photoacid generator; at least one novolak polymer; at least one polymer, having a polymer backbone, said polymer comprising a structure of the following formula: wherein R-Rare, independently, &#x2014;H or &#x2014;CH, A is a linear or branched C-Calkylene group, B is a C-Calkyl or alicyclic group, D is a linking group that may be a chemical bond, a carboxylate group, wherein the carbonyl carbon is bonded to the polymer backbone, or a &#x2014;COOCH&#x2014; group, wherein the carbonyl carbon is bonded to the polymer backbone, Ar is a substituted or unsubstituted aromatic group or heteroaromatic group, E is a linear or branched C-Calkylene group, G is an acid cleavable group. The invention further relates to a process for using the novel composition for forming an image.

Positive photosensitive material

Disclosed are compositions for negative-working thick film photophotoresists based on acrylic co-polymers. Also included are methods of using the compositions.

Negative-working thick film photoresist

The present invention relates to a negative photoresist composition comprising, a) at least one alkali-soluble polymer, where the polymer comprises at least one unit of structure 1, where, R' is selected independently from hydrogen, (C-C)alkyl, chlorine, bromine and m is an integer from 1 to 4; b) at least one monomer of structure 1, where, W is a multivalent linking group, Rto Rare independently selected from hydrogen, hydroxyl, (C-C) alkyl and chlorine, Xand Xare independently oxygen or N&#x2014;R, where Ris hydrogen or (C-C) alkyl, and n is and integer equal to or greater than 1, and c) at least one photoinitiator. The invention also relates to a process for imaging the negative photoresist composition.

Negative photoresist compositions

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.

Nanocomposite photoresist composition for imaging thick films

The present invention relates to a photoresist composition suitable for image-wise exposure and development as a negative photoresist comprising a negative photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The negative photoresist composition is selected from (1) a composition comprising (i) a resin binder, (ii) a photoacid generator, and (iii) a cross-linking agent; or (2) a composition comprising (i) a resin binder, (ii) optionally, addition-polymerizeable, ethylenically unsaturated compound(s) and (iii) a photoinitiator; or (3) a composition comprising (i) a photopolymerizable compound containing at least two pendant unsaturated groups; (ii) ethylenically unsaturated photopolymerizable polyalkylene oxide hydrophilic compound(s); and (iii) a photoinitiator.

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Piscataway, NJ, United States of America

Chunwei Chen