Samsung Electronics Co., Ltd.

Chungsun Lee

Jumyong Park

Dongjoon Oh

Un-Byoung Kang

Hyunsu Hwang

Ju-Il Choi

Jung-Hwan Kim

Jin Ho An

Kwang-Chul Choi

Solji Song

Jeonggi Jin

Unbyoung Kang

Junyun Kweon

Jung-Seok Ahn

Jeon Il Lee

Byeongchan Kim

Seyoung Jeong

Joonsik Sohn

Dongwoo Kim

Chajea Jo

Tae Hong Min

Ji-seok Hong

Yonghoe Cho

Gyuho Kang

Jinho Chun

Hyunah Kim

Yoonha Jung

Eun-Kyoung Choi

Seong-Hoon Bae

Teahwa Jeong

Jinwoo Park

Sanghoon Lee

Ho-jin Lee

Sangwook Park

Il Hwan Kim

Yonghwan Kwon

Taeje Cho

Teakhoon Lee

Jaekyung Yoo

Juil Choi

Jun Young Oh

Jinho An

Hogeon Song

Myungsung Kang

Sayoon Kang

Youngkun Jee

Suhyeon Ku

Seyeong Seok

Jungseok Ahn

YunSeok Choi

The semiconductor device may include a substrate, a first insulating layer on a bottom surface of the substrate, an interconnection structure in the first insulating layer, a second insulating layer on a bottom surface of the first insulating layer, and a plurality of lower pads provided in the second insulating layer. Each lower pad may be provided such that a width of a top surface thereof is smaller than a width of a bottom surface thereof. The lower pads may include first, second, and third lower pads. In a plan view, the first and third lower pads may be adjacent to center and edge portions of the substrate, respectively, and the second lower pad may be disposed therebetween. A width of a bottom surface of the second lower pad may be smaller than that of the first lower pad and may be larger than that of the third lower pad.

Semiconductor device including lower pads having different widths and semiconductor package including the same

A method for manufacturing a semiconductor package may include: forming a photoimageable dielectric layer on a substrate including a pad; forming a preliminary via hole in the photoimageable dielectric layer to expose the pad; forming a hard mask layer on the photoimageable dielectric layer and the pad; etching the photoimageable dielectric layer and the hard mask layer to form a via hole, a first hole, and a trench; forming a metal layer on the photoimageable dielectric layer connected to the pad; planarizing the metal layer to form a wiring pattern; and placing a semiconductor chip electrically connected to the wiring pattern. The first hole may be disposed on the via hole and connected thereto, and a diameter of the first hole may be larger than a diameter of the via hole.

Interconnection structure and semiconductor package including the same

Provided is a dry etching apparatus including: a plasma process chamber; an edge ring which is arranged in the plasma process chamber and on which a wafer is mounted; a shadow ring positioned to be spaced apart by a first vertical distance above the edge ring during a plasma etching process of the wafer; an operation unit coupled to the shadow ring and having a lift pin that raises and lowers the shadow ring; a fixing portion having a plurality of fixing pins engaged with the lift pin at different positions to fix a lowering point of the shadow ring; and a distance control unit that controls the fixing portion to determine the first vertical distance, wherein the first vertical distance is determined by a first horizontal distance between the wafer and the edge ring.

Dry etching apparatus and wafer etching system using the same

A semiconductor package includes: a first semiconductor chip including a first semiconductor substrate including a first active surface and a first inactive surface opposite to each other and a plurality of first chip pads on the first active surface; a second semiconductor chip including a second semiconductor substrate including a second active surface and a second inactive surface opposite to each other and a plurality of second chip pads on the second active surface, the second active surface being stacked on the first semiconductor chip to face the first inactive surface; a bonding insulation material layer interposed between the first semiconductor chip and the second semiconductor chip; and a plurality of bonding pads surrounded by the bonding insulation material layer to electrically connect the first semiconductor chip to the second semiconductor chip.

Semiconductor package and method of manufacturing the same

A molding apparatus for a semiconductor package includes a chamber including a lower mold configured to hold a substrate including a plurality of molding targets, an upper mold configured to move up and down with respect to the lower mold and define a cavity between the upper mold and the lower mold, and a port configured to provide a passage communicating with the cavity, a molding material supplier configured to supply a molding material to the port, a plunger configured to pressurize the molding material inside the port, a plunger actuator configured to apply a first pressure to the plunger such that the molding material provided in the port is supplied to the cavity, and a mold actuator configured to control actuation of the upper mold. The plunger actuator is configured to supply the molding material to the cavity by applying the first pressure to the plunger, and the mold actuator is configured to pressurize the molding material in the cavity by applying a second pressure to the upper mold. The mold apparatus further includes a controller configured to control the plunger actuator to reduce the first pressure applied to the plunger after the mold actuator begins applying the second pressure to the upper mold.

Molding apparatus of semiconductor package

A semiconductor device includes a first semiconductor chip that includes a first conductive pad whose top surface is exposed; and a second semiconductor chip that includes a second conductive pad whose top surface is exposed and in contact with at least a portion of the top surface of the first conductive pad. The first semiconductor chip may include a first diffusion barrier in contact with a bottom surface of the first conductive pad, and a second diffusion barrier in contact with a lateral surface of the first conductive pad, and the first diffusion barrier and the second diffusion barrier may include different materials from each other.

Semiconductor device and semiconductor package including the same

A semiconductor package includes a redistribution substrate that includes a first redistribution pattern and a second redistribution pattern that are at different levels from each other, and a semiconductor chip on the redistribution substrate and including a plurality of chip pads electrically connected to the first and second redistribution patterns. The first redistribution pattern includes a first metal pattern on a first dielectric layer, and a first barrier pattern between the first dielectric layer and a bottom surface of the first metal pattern. The second redistribution pattern includes a second metal pattern in a second dielectric layer, and a second barrier pattern between the second dielectric layer and a bottom surface of the second metal pattern and between the second dielectric layer and a sidewall of the second metal pattern.

Semiconductor packages

A wafer structure includes a semiconductor substrate that includes a chip region and a scribe lane region. A first dielectric layer is on a first surface of the semiconductor substrate, a second dielectric layer is on the first dielectric layer. A dielectric pattern is between the first dielectric layer and the second dielectric layer. A through via that penetrates the first surface and a second surface at the chip region of the semiconductor substrate, and a conductive pad is in the second dielectric layer and on the through via. The dielectric pattern includes an etch stop pattern on the chip region of the semiconductor substrate and in contact with a bottom surface of the conductive pad, and an alignment key pattern on the scribe lane region of the semiconductor substrate.

Wafer structure and semiconductor device

A semiconductor package includes a first semiconductor chip including a first semiconductor substrate, and a plurality of first through electrodes penetrating at least a portion of the first semiconductor substrate. A plurality of second semiconductors include a second semiconductor substrate, the plurality of second semiconductor chips being stacked on the first semiconductor chip. A plurality of bonding pads are arranged between the first semiconductor chip and the plurality of second semiconductor chips. A chip bonding insulating layer is arranged between the first semiconductor chip and the plurality of second semiconductor chips. At least one supporting dummy substrate is stacked on the plurality of second semiconductor chips and having a support bonding insulating layer arranged on a lower surface thereof.

Semiconductor package

A semiconductor package includes a first semiconductor chip having a first substrate, a first insulating layer on the first substrate, and a plurality of first bonding pads on the first insulating layer, and having a flat upper surface by an upper surface of the first insulating layer and upper surfaces of the plurality of first bonding pads; and a second semiconductor chip on the upper surface of the first semiconductor chip and having a second substrate, a second insulating layer below the second substrate and in contact with the first insulating layer, and a plurality of second bonding pads on the second insulating layer and in contact with the first bonding pads, respectively, wherein the first insulating layer includes an insulating interfacial layer in contact with the second insulating layer, embedded in the first insulating layer, and spaced apart from the plurality of first bonding pads.

Semiconductor device, semiconductor package and method of manufacturing the same

A semiconductor package may include: a first redistribution substrate; a first die above the first redistribution substrate; a second redistribution substrate on the first die; a first bump formed on the first die, and connecting the first die to the second redistribution substrate; a first molding portion enclosing the first die and surrounding the first bump; and an outer terminal on a bottom surface of the first redistribution substrate, wherein the second redistribution substrate comprises an insulating pattern and a conductive pattern in the insulating pattern to be in contact with the first bump, and wherein, at an interface of the second redistribution substrate and the first bump, the conductive pattern of the second redistribution substrate and the first bump are formed of the same material to form a single body or structure.

A semiconductor package includes an interposer having a first surface and a second surface opposite to the first surface and including a plurality of bonding pads, and first and second semiconductor devices on the interposer. Each of the plurality of bonding pads includes a first pad pattern provided to be exposed from the first surface and having a first width and a second pad pattern provided on the first pad pattern and having a second width greater than the first width.

Semiconductor package and method of manufacturing the semiconductor package

Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same. The interconnection structure comprises a first dielectric layer, a wiring pattern formed in the first dielectric layer, a portion of the wiring pattern exposed with respect to a top surface of the first dielectric layer, a second dielectric layer on the first dielectric layer, the second dielectric layer including an opening that exposes the exposed portion of the wiring pattern, a pad formed in the opening of the second dielectric layer, the pad including a base part that covers the exposed portion of the wiring pattern at a bottom of the opening and a sidewall part that extends upwardly along an inner lateral surface of the opening from the base part, a first seed layer interposed between the second dielectric layer and a first lateral surface of the sidewall part, the first seed layer being in contact with the first lateral surface and the second dielectric layer, and a second seed layer that conformally covers a second lateral surface of the sidewall part and a top surface of the base part, the second lateral surface being opposite to the first lateral surface the second dielectric layer.

Interconnection structure, method of fabricating the same, and semiconductor package including interconnection structure

Disclosed are interconnection structures and semiconductor packages. The interconnection structure includes a first dielectric layer and a first hardmask pattern that are sequentially stacked, and a first interconnection pattern that penetrates the first hardmask pattern and the first dielectric layer. The first hardmask pattern includes a dielectric material having an etch selectivity with respect to the first dielectric layer. The first interconnection pattern includes a via part, a first pad part, and a line part that are integrally connected to each other. The first pad part vertically overlaps the via part. The line part extends from the first pad part. A level of a bottom surface of the first pad part is lower than a level of a bottom surface of the line part.

Semiconductor packages having first and second redistribution patterns

Growing community of inventors

Anyang-si, South Korea

Chungsun Lee