Tokyo Electron Limited

Chungjong Lee

Jun Shinagawa

Masaki Kitsunezuka

Alok Ranjan

Masanobu Honda

Takayuki Katsunuma

Hiroshi Nagahata

Toshihiro Kitao

Provided is a method for monitoring a plasma-related process in a plasma tool. The method includes measuring data associated with the plasma-related process using a plurality of sensors while executing the plasma-related process on a wafer. Respective data measured by each sensor of the plurality of sensors are input into a respective individual estimation method to output a respective individual wafer state of the wafer, which results in a plurality of individual wafer states. The respective individual estimation method is configured to estimate the respective individual wafer state using at least the respective data. The plurality of individual wafer states is input into an integrated estimation method to output an integrated wafer state of the wafer. The integrated estimation method is configured to estimate the integrated wafer state using at least the plurality of individual wafer states.

Data fusion of multiple sensors

A method of operating a plasma tool includes executing a plasma process on a wafer. Data associated with the plasma process are measured using a plurality of sensors while the plasma process is executed on the wafer. The plasma process is terminated at an endpoint time. A post-process fault detection is executed by determining whether a post-process wafer state is within a target range. When the post-process wafer state is outside the target range so that a fault is detected, the fault is corrected using the data associated with the plasma process.

Autonomous operation of plasma processing tool

A method of evaluating tool health of a plasma tool is provided. The method includes providing a virtual metrology (VM) model that predicts a wafer characteristic based on parameters measured by module sensors and in-situ sensors of the plasma tool. A classification model is provided that identifies a plurality of failure modes of the plasma tool. An initial test is performed on an incoming wafer to determine whether the incoming wafer meets a preset requirement. The wafer characteristic is predicted using the VM model when the incoming wafer meets the preset requirement. A current failure mode is identified using the classification model when the wafer characteristic predicted by using the VM model is outside a pre-determined range.

Tool health monitoring and classifications with virtual metrology and incoming wafer monitoring enhancements

Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing container of a plasma processing apparatus that accommodates a workpiece. A partial region of the organic film that is exposed from a hard mask is changed into a denatured region by the generation of the plasma of the processing gas. Subsequently, plasma of a rare gas is generated within the processing container. The denatured region is removed by the plasma of the rare gas, and a substance released from the denatured region is deposited on the surface of the hard mask. In this method, the generation of the plasma of the processing gas and the generation of the plasma of the rare gas are repeated alternately.

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Miyagi, Japan

Chungjong Lee