Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung Ta Chen

Hsien-Ming Lee

Yi-Ting Wang

Tsung-Ta Tang

A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.

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Hsinchu, Taiwan

Chung Ta Chen