Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Ming Weng

Cheng-Chieh Hsieh

Hao-Yi Tsai

Hung-Yi Kuo

Tsung-Yuan Yu

Chen-Hua Douglas Yu

Chung-Shi Liu

Hua-Kuei Lin

Che-Hsiang Hsu

Tzu-Sung Huang

Ming-Hung Tseng

Chewn-Pu Jou

Hsiu-Jen Lin

Yen-Liang Lin

Hui-Jung Tsai

Yu-Hao Chen

Cheng-Tse Tang

Chun-Ti Lu

Yu-Hsiang Hu

Tzuan-Horng Liu

Jui-Feng Kuan

Chih-Hsuan Tai

Tsung-Hsien Chiang

Chien-Te Wu

Kris Lipu Chuang

Hui-Chun Chiang

Ming-Che Ho

Feng-Wei Kuo

Min-Hsiang Hsu

Hui-Yu Lee

Hui Yu Lee

A photonic integrated circuit has a central region and a peripheral region surrounding the central region. The photonic integrated circuit includes a semiconductor layer, a seal ring structure, and a plurality of silicon waveguides. The seal ring structure is disposed on the semiconductor layer. The seal ring structure is located in the peripheral region and has at least one recess recessing towards the central region from a top view. The seal ring structure is a continuous structure from the top view. The silicon waveguides are embedded in the semiconductor layer.

Photonic integrated circuit and package structure

A package structure including a first semiconductor die, a second semiconductor die, first conductive pillars and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure and a first redistribution circuit structure. The semiconductor substrate includes a first portion and a second portion disposed on the first portion. The interconnect structure is disposed on the second portion, the first redistribution circuit structure is disposed on the interconnect structure, and the lateral dimension of the first portion is greater than the lateral dimension of the second portion. The second semiconductor die is disposed on the first semiconductor die. The first conductive pillars are disposed on the first redistribution circuit structure of the first semiconductor die. The first insulating encapsulation is disposed on the first portion. The first insulating encapsulation laterally encapsulates the second semiconductor die, the first conductive pillars and the second portion.

Method of fabricating semiconductor structure

A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through substrate via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through substrate via. The second insulating encapsulation contacts with the second semiconductor die, the first insulting encapsulation, and the dielectric layer structure.

Method of fabricating semiconductor package

A semiconductor device includes an optical connector element and an optical coupler. The optical connector element includes a base structure, a first polymer via and a cladding layer. The base structure has a first surface and a second surface opposite to the first surface. The first polymer via passes through the base structure from the first surface to the second surface. The cladding layer is surrounding the first polymer via, wherein a refractive index of the cladding layer is different than a refractive index of the first polymer via. The optical coupler is disposed over the optical connector element, wherein the optical coupler receives optical signals from the first polymer via.

Package structure, semiconductor device and method of fabricating the same

An integrated circuit package and a method of forming the same are provided. The integrated circuit package includes a photonic integrated circuit die. The photonic integrated circuit die includes an optical coupler. The integrated circuit package further includes an encapsulant encapsulating the photonic integrated circuit die, a first redistribution structure over the photonic integrated circuit die and the encapsulant, and an opening extending through the first redistribution structure and exposing the optical coupler.

Package and method of forming same

A package includes a photonic layer on a substrate, the photonic layer including a silicon waveguide coupled to a grating coupler; an interconnect structure over the photonic layer; an electronic die and a first dielectric layer over the interconnect structure, where the electronic die is connected to the interconnect structure; a first substrate bonded to the electronic die and the first dielectric layer; a socket attached to a top surface of the first substrate; and a fiber holder coupled to the first substrate through the socket, where the fiber holder includes a prism that re-orients an optical path of an optical signal.

Photonic semiconductor device and method of manufacture

A semiconductor package includes a first die stack structure and a second die stack structure, an insulating encapsulation, a redistribution structure, at least one prism structure and at least one reflector. The first die stack structure and the second die stack structure are laterally spaced apart from each other along a first direction, and each of the first die stack structure and the second die stack structure comprises an electronic die; and a photonic die electronically communicating with the electronic die. The insulating encapsulation laterally encapsulates the first die stack structure and the second die stack structure. The redistribution structure is disposed on the first die stack structure, the second die stack structure and the insulating encapsulation, and electrically connected to the first die stack structure and the second die stack structure. The at least one prism structure is disposed within the redistribution structure and optically coupled to the photonic die. The at least one reflector is disposed on the at least one prism structure.

Semiconductor package and manufacturing method thereof

Disclosed are apparatus and methods for a silicon photonic (SiPh) structure comprising the integration of an electrical integrated circuit (EIC); a photonic integrated circuit (PIC) disposed on top of the EIC; two or more polymer waveguides (PWGs) disposed on top of the PIC and formed by layers of cladding polymer and core polymer; and an integration fan-out redistribution (InFO RDL) layer disposed on top of the two or more PWGs. The operation of PWGs is based on the refractive indexes of the cladding and core polymers. Inter-layer optical signals coupling is provided by edge-coupling, reflective prisms and grating coupling. A wafer-level system implements a SiPh structure die and provides inter-die signal optical interconnections among the PWGs.

Structures and process flow for integrated photonic-electric ic package by using polymer waveguide

A manufacturing method of a semiconductor package includes the following steps. A supporting layer is formed over a redistribution structure. A first planarization process is performed over the supporting layer. A lower dielectric layer is formed over the supporting layer, wherein the lower dielectric layer includes a concave exposing a device mounting region of the supporting layer. A first sacrificial layer is formed over the supporting layer, wherein the sacrificial layer filling the concave. A second planarization process is performed over the lower dielectric layer and the first sacrificial layer. A transition waveguide provided over the lower dielectric layer. The first sacrificial layer is removed. A semiconductor device is mounted over the device mounting region, wherein the semiconductor device includes a device waveguide is optically coupled to the transition waveguide.

Manufacturing method of semiconductor package

A package includes an electronic die, a photonic die underlying and electronically communicating with the electronic die, a lens disposed on the electronic die, and a prism structure disposed on the lens and optically coupled to the photonic die. The prism structure includes first and second polymer layers, the first polymer layer includes a first curved surface concaving toward the photonic die, the second polymer layer embedded in the first polymer layer includes a second curved surface substantially conforming to the first curved surface, and an outer sidewall of the second polymer layer substantially aligned with an outer sidewall of the first polymer layer.

Package having prism structure and manufacturing method thereof

Disclosed are semiconductor packages and manufacturing method of the semiconductor packages. In one embodiment, a semiconductor package includes a substrate, a first waveguide, a semiconductor die, and an adhesive layer. The first waveguide is disposed on the substrate. The semiconductor die is disposed on the substrate and includes a second waveguide aligned with the first waveguide. The adhesive layer is disposed between the first waveguide and the second waveguide.

Semiconductor package

A package structure including a photonic, an electronic die, an encapsulant and a waveguide is provided. The photonic die includes an optical coupler. The electronic die is electrically coupled to the photonic die. The encapsulant laterally encapsulates the photonic die and the electronic die. The waveguide is disposed over the encapsulant and includes an upper surface facing away from the encapsulant. The waveguide includes a first end portion and a second end portion, the first end portion is optically coupled to the optical coupler, and the second end portion has a groove on the upper surface.

Growing community of inventors

Hsinchu, Taiwan

Chung-Ming Weng