Industrial Technology Research Institute

National Science Council

Chung L Lee

Tan F Lei

Wen C Huang

Gordon Yu

Chih-Yuan Liu

Chanson Lin

Lurng Shehng Lee

A removable electronic device includes a detector for detecting a mode of operation to distinguish among a multimedia card (MMC) compatible mode, a universal serial bus (USB) compatible mode, and a Mu mode, a wrapper for converting data for transfer between the USB compatible mode and the Mu mode, a USB physical layer circuit for transferring data compatible with the USB compatible mode, a USB compatible device controller for controlling data transfer in the USB compatible mode, and an MMC compatible device controller for controlling data transfer in the MMC compatible mode.

Removable electronic device and method thereof

With the growing practice of doping gates for MOSFETs with boron, problems have been encountered due to later diffusion of the boron into the active region. To block this, argon ions are implanted into the gate pedestal material prior to doping it with boron. The damage caused by the argon ions results in traps that getter the boron atoms, behaving in effect as a diffusion barrier. The invention is directed specifically to gate pedestals that are less than about 3000 Angstroms thick. Under these conditions it has been determined that the implantation energies of the argon ions should not exceed 80 keV. It is also important that the dosage of argon be in the range from 1.times.10.sup.15 to 1.times.10.sup.16 per cm.sup.2. Preferably doses in excess of 5.times.10.sup.15 should be used as they also lead to improvements in subthreshold swing and hot carrier immunity.

Method to suppress boron penetration in P+ mosfets

A new Schottky diode structure, Pt/Al/n-InP, is disclosed in the present invention. The thickness of Al layer of the Schottky diode structure is restricted in a range of about 80-120 .ANG.. This structure gives a barrier height of 0.74 eV and an ideality factor of 1.11 after it was annealed at 300.degree. C. for 10 min. This is due to the formation of Aluminum-oxide, as the interfacial layer to improve barrier height. A method of preparing this Schottky diode structure is also disclosed in the present invention.

N-INP Schottky diode structure and a method of making the same

N-InP Schottky diode structure and a method of making the same

Growing community of inventors

Hsinchu, Taiwan

Chung L Lee