Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Jung Wu

Chih-Hang Tung

Tung-Liang Shao

Sheng-Tsung Hsiao

Jen-Yu Wang

Chen-Hua Douglas Yu

Jen Yu Wang

Yi-Li Hsiao

Su-Chun Yang

Da-Yuan Shih

Hsiao-Yun Chen

Chien-Ling Hwang

Jeng-Nan Hung

Wei-chih Chen

Tung Li Wu

Hsu-Chin Tseng

Disclosed are a bonding system and a bonding method. In one embodiment, the bonding system includes a chamber, first and second electrostatic chucks, a visible light sensor module and a nonvisible light module. The chamber is configured to provide a vacuum state. The first electrostatic chuck is configured to hold a first substrate having a first alignment mark in the chamber, wherein the first electrostatic chuck has a first window. The second electrostatic chuck is configured to hold a second substrate having a second alignment mark in the chamber, wherein the second electrostatic chuck has a second window. The visible light sensor module is configured to capture images of the first and the second alignment marks. The nonvisible light module is configured to capture a combined image of the first and second alignment marks via the first and second windows overlapping each other in the vacuum state.

Bonding system and method

A semiconductor device includes a package and a cooling cover. The package includes a first die having an active surface and a rear surface opposite to the active surface. The rear surface has a cooling region and a peripheral region enclosing the cooling region. The first die includes micro-trenches located in the cooling region of the rear surface. The cooling cover is stacked on the first die. The cooling cover includes a fluid inlet port and a fluid outlet port located over the cooling region and communicated with the micro-trenches.

Semiconductor device and manufacturing method thereof

Semiconductor devices including lids having liquid-cooled channels and methods of forming the same are disclosed. In an embodiment, a semiconductor device includes a first integrated circuit die; a lid coupled to the first integrated circuit die, the lid including a plurality of channels in a surface of the lid opposite the first integrated circuit die; a cooling cover coupled to the lid opposite the first integrated circuit die; and a heat transfer unit coupled to the cooling cover through a pipe fitting, the heat transfer unit being configured to supply a liquid coolant to the plurality of channels through the cooling cover.

Packaged semiconductor device including liquid-cooled lid and methods of forming the same

A semiconductor package includes a package substrate; semiconductor devices disposed on the package substrate; a package ring disposed on a perimeter of the package substrate surrounding the semiconductor devices; a cover including silicon bonded to the package ring and covering the semiconductor devices; and a thermal interface structure (TIS) thermally connecting the semiconductor devices to the cover.

Semiconductor package including thermal interface structures and methods of forming the same

A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

Method of forming semiconductor package with composite thermal interface material structure

A semiconductor package is provided. The semiconductor package includes a substrate and a semiconductor die over the substrate. A heat-dissipating feature covers the substrate and the semiconductor die, and a composite thermal interface material (TIM) structure is thermally bonded between the semiconductor die and the heat-dissipating feature. The composite TIM structure includes a metal-containing matrix material layer and polymer particles embedded in the metal-containing matrix material layer.

Semiconductor package with composite thermal interface material structure and method of forming the same

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn&#x2014;Bi compound, and the eutectic Sn&#x2014;Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90&#xb0;. The method further includes cooling down the solder bump.

Solder bump stretching method for forming a solder bump joint in a device

A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down to form a solder bump joint in an electrical device.

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Hsinchu, Taiwan

Chung-Jung Wu