Samsung Electronics Co., Ltd.

Chung-hwan Shin

Tae-Yeol Kim

Jun-soo Kim

Hyon-wook Ra

Seo-bum Lee

A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Growing community of inventors

Hwaseong-si, South Korea

Chung-hwan Shin