Asml Netherlands B.v.

Chung-Hsun Li

Everhardus Cornelis Mos

Peter Ten Berge

Franciscus Bernardus Maria Van Bilsen

Hoite Pieter Theodoor Tolsma

Christianus Gerardus Maria De Mol

Leonardus Henricus Marie Verstappen

Paul Jacques Van Wijnen

Gerald Dicker

Wouter Lodewijk Elings

Johan Gertrudis Cornelis Kunnen

Frederik Eduard De Jong

Reiner Maria Jungblut

Georgios Tsirogiannis

Hendrik Cornelis Anton Borger

Maxim Pisarenco

Willem Richard Pongers

Johan Franciscus Maria Beckers

Dylan John David Davies

Juan Manuel Gonzalez Huesca

Arnaud Hubaux

Ajinkya Ravindra Daware

Andriy Hlod

Ruud Hendrikus Martinus Johannes Bloks

Siebe Landheer

Patricius Jacobus Neefs

Cornelis Melchior Brouwer

Si-Han Zeng

A method for categorizing a substrate subject to a semiconductor manufacturing process including multiple operations, the method including: obtaining values of functional indicators derived from data generated during one or more of the multiple operations on the substrate, the functional indicators characterizing at least one operation; applying a decision model including one or more threshold values to the values of the functional indicators to obtain one or more categorical indicators; and assigning a category to the substrate based on the one or more categorical indicators.

Method for decision making in a semiconductor manufacturing process

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.

Methods and apparatus for measuring a property of a substrate

Disclosed is a method of determining calibrated reference exposure and measure grids for referencing position of a substrate stage in a lithographic system. The method comprises obtaining calibration data relating to one or more calibration substrates; and determining an exposure grid for an exposure side of the lithographic system from said calibration data and a measure grid for a measure side of the lithographic system from said calibration data. The exposure grid and said measure grid are decomposed so as to remove a calibration substrate dependent component from said exposure grid and from said measure grid to obtain a substrate independent exposure grid and substrate independent measure grid.

Calibration method for a lithographic system

A method of determining an overlay value of a substrate, the method including: obtaining temperature data that includes data on measured temperature at one or more positions on a substrate table after a substrate has been loaded onto the substrate table; and determining an overlay value of the substrate in dependence on the obtained temperature data. There is further disclosed a method of determining a performance of a clamping by a substrate table using a determined overlay value.

Method and system for determining overlay

In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produceddefined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is usedto control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stackedto at least partially recompose the measurement results according to the sample plan.

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Eindhoven, Netherlands

Chung-Hsun Li