Cyntec Company

Chung-Hsiung Wang

Hung-Ming Lin

Kuo-Shu Chen

Wen-Shiang Luo

Lang-Yi Chiang

Chun-Tiao Liu

Yu-Hsin Lin

Wen-Hsiung Liao

Yen-Ting Lin

Hideo Ikuta

Duen-Jen Cheng

Wei-Chien Chang

Yi-Geng Li

Wu-Liang Chu

Chih Sheng Kuo

Han-Yang Chung

Hui-Wen Hsu

Po-Wei Su

Hong-Ming Chen

A method of manufacturing a multi-layer coil includes steps of providing a substrate; forming a seed layer on the substrate; and plating the seed layer with N coil layers by N current densities according to N threshold ranges, so as to form the multi-layer coil on the substrate, wherein an i-th current density of the N current densities is lower than an (i+1)-th current density of the N current densities. A first coil layer of the N coil layers is plated on the seed layer by a first current density of the N current densities. When an aspect ratio of an i-th coil layer of the N coil layers is within an i-th threshold range of the N threshold ranges, an (i+1)-th coil layer of the N coil layers is plated on the i-th coil layer by the (i+1)-th current density.

Method of manufacturing multi-layer coil and multi-layer coil device

A current conducting element including a substrate, a through hole, an electrode layer and a conductor structure is provided. The through hole is disposed through the substrate and has a first opening. The electrode layer is disposed on the substrate. A portion of the first opening is exposed from the electrode layer. The conductor structure is disposed in the through hole and contacted with the electrode layer. The electrode layer and the conductor structure form a current conducting path.

Current conducting element

A protective device including a substrate, a conductive section and a bridge element is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The bridge element spans across the metal element in a direction across direction of current flow in the metal element, wherein the bridge element facilitates breaking of the metal element upon melting.

Protective device

A protective device includes a substrate, an electrode layer, a metal structure, an outer cover and an arc extinguishing structure. The electrode layer is disposed on the substrate. The electrode layer includes at least one gap. The metal structure is disposed on the electrode layer and located above the gap, and the metal structure has a melting temperature lower than a melting temperature of the electrode layer. The outer cover is disposed on the substrate and covers the metal structure and a portion of the electrode layer. The arc extinguishing structure is disposed between the outer cover and the substrate. A protective module is further provided.

Protective device and protective module

A protective device includes a substrate, two first electrodes, a low-melting point metal layer and an assisting layer. The first electrodes are respectively arranged at two opposite sides of the substrate. The low melting point metal layer is arranged over the two first electrodes. The assisting layer is formed on the low melting point metal layer. The liquidus temperature of the assisting layer is below the liquidus temperature of the low melting point metal layer, and the liquidus temperature of the assisting layer is not below a predetermined temperature which is below the maximum working temperature of reflow soldering process by 25 degrees.

A protective device including a substrate, a conductive section and a first auxiliary medium is provided. The conductive section is supported by the substrate, wherein the conductive section comprises a metal element electrically connected between first and second electrodes. The metal element serves as a sacrificial structure having a melting point lower than that of the first and second electrodes. The first auxiliary medium is disposed between the metal element and the substrate, wherein the first auxiliary medium has a melting point lower than that of the metal element. The first auxiliary medium facilitates breaking of the metal element upon melting.

An over-voltage protection device and a method for manufacturing the over-voltage protection device are provided. The over-voltage protection device includes a substrate, a pair of electrode layers, a mask layer, and a sealing layer. The electrode layers are disposed on the substrate, and a gap is formed between the electrode layers. The mask layer is disposed over the gap and a portion of the electrode layers. The sealing layer covers the mask layer and the gap.

Over-voltage protection device and method for manufacturing thereof

A resistive component suitable for detecting electric current in a circuit and a method of manufacturing the resistive component are provided. The resistive component includes a carrier, a resistive layer, an electrode unit, an upper oxide layer and a protective layer. The resistive layer comprises copper alloy and is disposed on the carrier. The electrode unit is electrically connected to the resistive layer. The upper oxide layer is disposed on a part of a surface of the resistive layer and includes oxides of the resistive layer. The protective layer covers at least a part of the upper oxide layer.

Resistive component and method of manufacturing the same

The present invention discloses a substrate structure for supporting a thin film with specific temperature coefficient of resistance (TCR) thereon. The substrate structure includes a substrate composed of a borosilicate glass. The substrate further includes an interface layer of LaSiONx covering a top surface of the substrate. The substrate supports the thin film includes a platinum thin film thereon. The substrate structure further includes an adhesion anchoring seam disposed as a bonding seam interfacing the thin film to the substrate for securely attaching the thin film to the substrate therein. The bonding seam is disposed on a boundary edge of the thin film and includes a nickel-chromium alloy anchor seam disposed on the boding seam. In a preferred embodiment, the substrate structure includes a protective layer covering and protecting the substrate structure thereunder. In another preferred embodiment, the substrate structure further includes electrodes for electrically connecting to the thin film with the specific TCR for providing an electrical voltage thereto.

Growing community of inventors

Hsinchu, Taiwan

Chung-Hsiung Wang