Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung-Hsiu Cheng

Chih-Hsien Hsu

Ming-Chyi Liu

Chia-Chi Chung

Jr-Sheng Chen

Pin-Yi Hsin

Ken Liao

Wei-Yueh Tseng

Chou-Feng Lee

Young-Shuen Chou

Shih-Hao Wu

I-Che Chiu

Cheng Kuang Tso

Tsung-Hao Lu

Methods and systems for uniformly cooling a dome within a plasma treatment system are disclosed. The methods and systems utilize a diffuser including a perforated plate and a cone. The perforated plate includes a center portion and multiple arrays of holes with each array being located circumferentially at a different distance from the center. The cone extends away from the center. The diffuser spreads cooling gas more uniformly across the surface of the dome.

Methods and systems for cooling plasma treatment components

A method for processing a semiconductor wafer is provided. The method includes placing a semiconductor wafer on a wafer chuck. The method further includes performing a process over the wafer. The method also includes supplying a cooling gas to the backside of the semiconductor wafer via a groove and a number of ventilation apertures located in the groove. Two of the neighboring ventilation apertures are separated in a circumferential direction relative to the center of the wafer chuck by a predetermined angle that is less than 90 degrees.

Method and apparatus for wafer backside cooling

A method of fabricating a semiconductor device is illustrated. A substrate having a plurality of trenches is provided. The plurality of trenches include trenches having differing widths. A first layer is formed on the substrate including in the plurality of trenches. Forming the first layer creates an indentation in the first layer in a region overlying a trench (e.g., wide trench). A second layer is formed in the indentation. The first layer is etched while the second layer remains in the indentation. The second layer may protect the region of indentation from further reduction in thickness. In an embodiment, the first layer is polysilicon and the second layer is BARC of photoresist.

Method of forming a layer on a semiconductor substrate having a plurality of trenches

A deep ultraviolet (UV) light-resistant photoresist plug for via holes, as may be used in damascene, dual-damascene, and other types of semiconductor fabrication processing, is disclosed. A via hole of a semiconductor wafer is partially plugged with non-photosensitive photoresist, such as negative photoresist. The via hole and the wafer are then coated with a deep UV light-sensitive photoresist. The deep UV light-sensitive photoresist is exposed to deep UV light, such as 193 nanometer (nm) wavelength light, where the non-photosensitive photoresist is unresponsive to the deep UV light. The wafer is then developed to selectively remove the deep UV light-sensitive photoresist, where the non-photosensitive photoresist substantially remains.

Deep UV-resistant photoresist plug for via hole

Growing community of inventors

Taipei, Taiwan

Chung-Hsiu Cheng