Nan Ya Technology Corporation

Infineon Technologies Ag

Chung-Hsin Lin

Ying-Cheng Chuang

Chao-Wen Lay

Dirk Efferenn

Jens Bachmann

Uwe Kahler

Hung-Mo Wu

Wen-Bin Lin

Ping-Heng Wu

Jens Hahn

Grit Bonsdorf

Ronald Gottzein

Lee Donohue

The invention provides a semiconductor device including a substrate, a dielectric layer, a dummy bonding pad, a bonding pad, a redistribution layer, and a metal interconnect. The substrate includes a non-device region and a device region. The dielectric layer is on the non-device region and the device region. The dummy bonding pad is on the dielectric layer of the non-device region. The metal interconnect is in the dielectric layer of the non-device region and connected to the dummy bonding pad. The bonding pad is on the dielectric layer of the device region. The buffer layer is between the bonding pad and the dielectric layer. The buffer layer includes metal, metal nitride, or a combination thereof. The redistribution layer is on the dielectric layer and connects the dummy bonding pad and the bonding pad.

Method of fabricating semiconductor device having voids between top metal layers of metal interconnects

Semiconductor device having voids between top metal layers of metal interconnects

The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N); (b) a stabilization step in the presence of pure molecular nitrogen gas (N); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

Process for removing a residue from a metal structure on a semiconductor substrate

A method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits includes the following steps: providing a substrate; providing a whisker-containing layer made of aluminum metal or an aluminum alloy on the substrate; back-etching and/or resputtering the whisker-containing layer such that the whiskers are essentially removed; and structuring the whisker-free layer into the lines.

Method for providing whisker-free aluminum metal lines or aluminum alloy lines in integrated circuits

Growing community of inventors

Taipei, Taiwan

Chung-Hsin Lin