Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Chun-Wei Liao

Hui-Chun Lee

Tung-Hung Feng

Shih-Che Wang

Yi-Lii Huang

Ming-Chang Lee

Sheng-Wen Huang

Huei-Shan Wu

Sheng-Wen Jiang

Jan-Liang Yang

Yao-Tsu Yang

Yun-Jhen Liao

In a method of manufacturing a semiconductor device, a hydrophobic solvent as a gas is directed to flow over a bevel region of a wafer. A layer of the hydrophobic solvent is deposited on an upper bevel of the bevel region on top surface of the wafer and on a lower bevel of the bevel region on bottom surface of the wafer. A metal-containing photo resist layer is disposed on an internal region of the top surface of the wafer enclosed by the bevel region. During a subsequent processing operation, a photo resist material of the metal-containing photo resist layer is blocked off inside the top surface of the wafer by the layer of the hydrophobic solvent.

Method of manufacturing semiconductor devices

A method for manufacturing a semiconductor device includes forming a forming a photoresist layer over a semiconductor substrate and selectively exposing the photoresist layer to actinic radiation. After selectively exposing the photoresist layer to actinic radiation, storing the semiconductor substrate in a semiconductor substrate container under an ambient of extreme dry clean air or inert gas. The method also includes after the storing the semiconductor substrate, performing a first heating of the photoresist layer.

Method of storing photoresist coated substrates and semiconductor substrate container arrangement

A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

Method and apparatus for solvent recycling

A semiconductor device includes a first dielectric layer, a cobalt-containing conductive feature, a non-cobalt conductive feature, a second dielectric layer, a first tungsten contact feature, a second tungsten contact feature, and a tungsten barrier layer. The cobalt-containing conductive feature is disposed in the first dielectric layer. The non-cobalt conductive feature is disposed in the first dielectric layer, and is spaced apart from the cobalt-containing conductive feature. The second dielectric layer is disposed over the first dielectric layer. The first tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the cobalt-containing conductive feature. The second tungsten contact feature is disposed in the second dielectric layer, and is electrically connected to the non-cobalt conductive feature. The tungsten barrier layer surrounds the second tungsten contact feature, and is connected to the second tungsten contact feature, the non-cobalt conductive feature and the second dielectric layer.

Semiconductor device and method for making the semiconductor device

The present invention relates to a 3-D waveguide coupling device capable of two-step coupling and a manufacture method thereof, the 3-D waveguide coupling device comprises: a first substrate, at least one waveguide layer, at least one assisting grating, at least one coupling material layer, and at least one 3-D tapered structure layer, wherein 3-D waveguide coupling device is able to couple the light into the waveguide layer by way of two-step coupling through the 3-D tapered structure layer, the coupling material layer and the assisting grating. Moreover, the light can also be coupled out from the waveguide layer through the assisting grating, the coupling layer, and the 3-D tapered structure. The manufacture method is adapted to fabricate the 3-D waveguide coupling device capable of two-step coupling via the present semiconductor process technology without increasing any other new equipment.

Growing community of inventors

Hsinchu, Taiwan

Chun-Wei Liao