Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Mosel Vitelic Corporation

Chun-Sheng Chen

Huei-Wen Hsieh

Kai-Shiang Kuo

Cheng-Hui Weng

Wen-Hsuan Chen

Hung-Wen Su

Chun-Chieh Lin

Kuan-Chia Chen

Nai-Hao Yang

Yu-Cheng Hsiao

Cheng-Lun Tsai

Chun-Hsu Yang

Che-Wei Tien

Jen-Wei Liu

Yung-Chih Chen

Wei-Ting Lin

Shi-Ing Huang

Shian-Yih Wang

Lung-Cheng Cheng

Interconnect structures and methods and apparatuses for forming the same are disclosed. In an embodiment, a method includes supplying a process gas to a process chamber; igniting the process gas into a plasma in the process chamber; reducing a pressure of the process chamber to less than 0.3 mTorr; and after reducing the pressure of the process chamber, depositing a conductive layer on a substrate in the process chamber.

Interconnect structures and methods and apparatuses for forming the same

A method of forming a semiconductor device includes forming an opening in a dielectric layer, and forming a barrier layer in the opening. A combined liner layer is formed over the barrier layer by first forming a first liner layer over the barrier layer, and forming a second liner layer over the first liner layer, such that the first liner layer and the second liner layer intermix. A conductive material layer is formed over the combined liner layer, and a thermal process is performed to reflow the conductive material layer.

Bi-layer alloy liner for interconnect metallization and methods of forming the same

An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same

A MOSFET includes a substrate, a trench, a bottom oxide, a shield poly, two gate polys and an inter-poly oxide. The trench is formed on the substrate. The bottom oxide is formed on the trench. The shield poly is formed on the trench, and a part of the bottom oxide is separated by the shield poly. The two gate polys are formed on the bottom oxide. The inter-poly oxide is formed between the two gate polys. The shield poly is staggered from at least one of the two gate polys in a horizontal direction and a vertical direction. Therefore, the capacitance between a source electrode and a gate electrode is effectively reduced, and the delay time during switching is shorten and the energy loss is reduced at the same time.

MOSFET and manufacturing method thereof

In the manufacturing method of fluoro based polymer composite boards of the invention, which provides a fast process and high efficiency, a suitable amount of water soluble organic solvent is added to a fluoro based polymer suspension during the process of mixing ceramic powder and/or glass fiber to the fluoro based polymer suspension in order to improve the coagulation of the fluoro based polymer and ceramic powder, and to reduce the gelling time. During the process of mixing ceramic powder and/or glass fiber, the fluoro based polymer suspension and the organic solvent, a suitable amount of water can be added to control the ratio between the water and the organic solvent obtained from the mixture. The gelling time of the mixture can thus be reduced. By controlling the ratio between the water and the organic solvent obtained from the mixture, there is still enough time to allow homogeneous mixing after the gelling speed is increased.

Manufacturing method of fluoro based composite boards

Growing community of inventors

Hsinchu, Taiwan

Chun-Sheng Chen