Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Ming Yang

Ming-Hsi Yeh

Chun-Sheng Liang

Hsin-Che Chiang

Ying-Liang Chuang

Ju-Li Huang

Yu-Chi Pan

Yu-Wen Wang

Yu-jiun Peng

A method for forming a multi-gate semiconductor structure is provided. A substrate including a fin structure is received. First portions of the fin structure are removed to expose a source/drain region of the fin structure. A semiconductor layer is formed in the source/drain region. Second portions of the fin structure are removed to expose a channel region of the fin structure. A surface of the channel region of the fin structure is cleaned. An interfacial layer is formed over the cleaned surface of the channel region of the fin structure.

Method for forming multi-gate semiconductor structure

The present disclosure describes structure and method of a fin field-effect transistor (finFET) device. The finFET device includes: a substrate, a fin over the substrate, and a gate structure over the fin. The gate structure includes a work-function metal (WFM) layer over an inner sidewall of the gate structure. A topmost surface of the WFM layer is lower than a top surface of the gate structure. The gate structure also includes a filler gate metal layer over the topmost surface of the WFM layer. A top surface of the filler gate metal layer is substantially co-planar with the top surface of the gate structure. The gate structure further includes a self-assembled monolayer (SAM) between the filler gate metal layer and the WFM layer.

Gate resistance improvement and method thereof

Growing community of inventors

Taipei, Taiwan

Chun-Ming Yang