Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Lin Wu

Shih-Chang Chen

Chi-Chun Chen

Tze-Liang Lee

Vincent Chang

Tze Liang Lee

Chia Lin Chen

A method of determining a composition of an integrated circuit feature, including collecting intensity data representative of spectral wavelengths of radiant energy generated by a plasma during plasma nitridation of an integrated circuit feature disposed on a substrate, analysing the in intensity data to determine a peak intensity at one of the wavelengths, and determining a component concentration of the feature based on the peak intensity.

Method and system for determining a component concentration of an integrated circuit feature

The present disclosure provides a method for forming a gate stack structure for semiconductor devices. The disclosed method comprises steps such as forming a dielectric layer on a substrate; applying a plasma nitridation process on the formed dielectric layer; applying a first anneal process on the deposited dielectric layer; etching the dielectric layer to a predetermined thickness using a diluted etchant; applying a second anneal process using an oxygen environment on the etched dielectric layer after the etching; and forming a gate electrode layer on top of the dielectric layer. The etching makes the top portion of the etched dielectric layer have a significantly higher concentration of nitrogen than the lower portion of the etched dielectric layer so as the leakage current is significantly reduced.

Method for manufacturing a thin gate dielectric layer for integrated circuit fabrication

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Hsinchu, Taiwan

Chun-Lin Wu