National Cheng-kung University

Cyntec Company

Epitech Corporation, Ltd.

Chun-Liang Lin

Yan-Kuin Su

Kuan-Chun Chen

Shu-Kai Hu

Jin-Quan Huang

Da-Jung Chen

Chau Chun Wen

Chun-Tiao Liu

Shi-Ming Chen

Jeng-Jen Li

Chih-Chan Day

Cheng Chieh Hsu

Wen-Bin Chen

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

Method for manufacturing heat dissipation bulk of semiconductor device

An embedded metal heat sink for a semiconductor device is described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Embedded metal heat sink for semiconductor

An embedded metal heat sink for a semiconductor device and a method for manufacturing the same are described. The embedded metal heat sink for a semiconductor device comprises a metal thin layer, a metal heat sink and two bonding pads. The metal thin layer including a first surface and a second surface on opposite sides, wherein at least one semiconductor device is embedded in the first surface of the metal thin layer, and the semiconductor device has two electrodes with different conductivity types. The metal heat sink is deposited on the second surface of the metal thin layer. The bonding pads are deposed on the first surface of the metal thin layer around the semiconductor device and are respectively corresponding to the electrodes, wherein the electrodes are electrically and respectively connected to the corresponding bonding pads by at least two wires, and the bonding pads are electrically connected to an outer circuit.

Embedded metal heat sink for semiconductor device and method for manufacturing the same

The present invention provides a package device for reducing the electromagnetic/radio frequency interference, which includes a first substrate with a shielding structure on the under surface of the first substrate, and an insulating layer on the shielding structure. The first substrate includes a through hole that is filled with the conductor therein. A plurality of lead-frames located on the bottom surface of the first substrate. A second substrate located above between the two lead-frames. Then, the molding compound encapsulated to cover the above structures to form a package device. Therefore, the shielding path of the package device is constructed of the plurality of lead-frames, the conductor within the first substrate, the shielding structure, and the grounded to discharge the electromagnetic/radio frequency out of the package device, thus, the electromagnetic/radio frequency interference for the package device can be reduced.

Package device with electromagnetic interference shield

A power module package structure is disclosed. The control circuits are fabricated on a circuit plate, instead of fabricating them directly on a main substrate. The fabrication cost is reduced because the size of the substrate is shrunk. Furthermore, the power chips are placed on a material with high thermal conductivity. The heat produced from the power chips can be transmitted quickly. Thus, the reliability of the power module package can be improved.

Power module package structure

A method for manufacturing a heat sink of a semiconductor device is described. In the method, an adhesive tape is provided, wherein the adhesive tape includes a first surface and a second surface on opposite sides, and the first surface of the adhesive tape adheres to a surface of a temporary substrate. At least one semiconductor device is provided, wherein the semiconductor device includes a first side and a second side opposite to the first side, and the first side of the one semiconductor device is pressed and set into a portion of the second surface of the adhesive tape, and the second side of the one semiconductor device is exposed. A thin metal layer is formed on the second side of the semiconductor device and the exposed portion of the second surface of the adhesive tape. A metal heat sink is formed on the thin metal layer. Then, the adhesive tape and the temporary substrate are removed.

Method for manufacturing heat sink of semiconductor device

A lateral current blocking light emitting diode (LED) and a method of making the same are disclosed. The present invention features in that a trench is formed between the two electrodes via the technique of such as etching, wherein the depth of the trench reaches to at least the active layer, thereby blocking the lateral current between the two electrodes. With the use of the present invention, the possibility of the current passing through the active layer can be increased, thereby improving the brightness of the LED; and the chance of the photons emitted from the lateral of the trench can be raised wherein the photons are generated from the active layer, thereby increasing the output efficiency of the photons generated from the active layer.

Growing community of inventors

Tainan, Taiwan

Chun-Liang Lin