Nan Ya Technology Corporation

Micron Technology Incorporated

Chun-I Hsieh

Chang-Rong Wu

Vishwanath Bhat

Chris M Carlson

Vassil N Antonov

Tsai-Yu Huang

Neng-Tai Shih

Daniel Damjanovic

Kou-Chen Liu

Shih-Shu Tsai

A method for fabricating a capacitor includes: (1) forming a bottom electrode on a substrate; (2) forming a template layer on the bottom electrode; (3) performing a plurality of atomic layer deposition (ALD) cycles by using water vapor as an oxidant thereby depositing a first TiO2 layer on the template layer; and (4) performing ozone pulse and purge step to transform entire thickness of the first TiO2 layer into rutile phase.

Method for fabricating capacitor having rutile titanium oxide dielectric film

Methods of forming a capacitor including forming a titanium nitride material within at least one aperture defined by a support material, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The titanium nitride material may be oxidized to a titanium dioxide material. A second conductive material may be formed over a surface of the titanium dioxide material. A semiconductor device may include at least one capacitor, wherein a major longitudinal portion of the at least one capacitor is not surrounded by a solid material. The capacitor may include a first electrode; a ruthenium oxide material laterally adjacent the first electrode; a rutile titanium dioxide material laterally adjacent the ruthenium oxide material; and a second electrode laterally adjacent the rutile titanium dioxide material.

Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide material

A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiOlayer on the first electrode. Subsequently, the transitional amorphous TiOlayer is treated by oxygen plasma to transform the entire transitional amorphous TiO2 layer into a rutile TiOlayer. Finally, a second electrode is deposited on the rutile TiOlayer.

Process for forming a capacitor structure with rutile titanium oxide dielectric film

A magnetoresistive random access memory (MRAM) element includes a bottom electrode embedded in a first insulating layer; an annular reference layer in a first via hole of a second insulating layer on the first insulating layer, the annular reference layer being situated above the bottom electrode; a first gap fill material layer filling the first via hole; a barrier layer covering the annular reference layer, the second insulating layer and the first gap fill material layer; an annular free layer in a second via hole of a third insulating layer on the second insulating layer, the annular free layer being situated above the annular reference layer; and a top electrode stacked on the annular free layer.

Method for fabricating magnetoresistive random access memory element

An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.

Method of forming RRAM structure

Magnetoresistive random access memory element and fabrication method thereof

Resistive random access memory structure with tri-layer resistive stack

Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material.

Methods of forming a capacitor including forming at least one aperture in a support material, forming a titanium nitride material within the at least one aperture, forming a ruthenium material within the at least one aperture over the titanium nitride material, and forming a first conductive material over the ruthenium material within the at least one aperture. The support material may then be removed and the titanium nitride material may be oxidized to form a titanium dioxide material. A second conductive material may then be formed over an outer surface of the titanium dioxide material. Capacitors, semiconductor devices and methods of forming a semiconductor device including the capacitors are also disclosed.

Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating same

A method for fabricating an RRAM is provided. First, a bottom electrode is formed. A resistive layer is formed on the bottom electrode. A top electrode is then formed on the resistive layer, wherein the top electrode is selected from the group consisting of indium tin oxide (ITO) and indium zinc oxide (IZO). Finally, the top electrode is irradiated with UV light.

RRAM with improved resistance transformation characteristic and method of making the same

A non-volatile memory cell and a fabrication method thereof are provided. The non-volatile memory cell includes an anode; a cathode having a surface facing the anode; a specific structure disposed on the surface; and an ion conductor disposed among the anode, the cathode and the specific structure, wherein the specific structure is one of a bulging area on the surface of the cathode and an insulating layer with an opening.

Non-volatile memory cell and fabrication method thereof

A non-volatile memory cell and the fabrication method thereof are provided. The non-volatile memory cell comprises a top electrode, a bottom electrode and an oxide layer disposed between the top electrode and the bottom electrode. The oxide layer comprises a relatively low oxygen content layer adjacent to the bottom electrode, a relatively high oxygen content layer adjacent to the top electrode, and a transition layer disposed between the relatively high and the relatively low oxygen content layers. The transition layer has an oxygen concentration within a range between those of the relatively high and the relatively low oxygen content layers.

Growing community of inventors

Taoyuan County, Taiwan

Chun-I Hsieh