Globalwafers Co., Ltd.

Sino-American Silicon Products Inc.

Chun-I Fan

Wen-Ching Hsu

Chih-Yuan Chuang

Ying-Ru Shih

Man-Hsuan Lin

Chi-Tse Lee

Jer-Liang Andrew Yeh

Wen-Huai Yu

Hung-Sheng Chou

Bruce Hsu

Chien-Jen Sun

Li Wei Li

Wen Ching Hsu

A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 &#x3bc;m and less than 200 &#x3bc;m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90&#xb0; is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 &#x3bc;m and 800 &#x3bc;m.

Method of manufacturing epitaxy substrate

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (&#x212b;) and 500 angstroms.

Epitaxy substrate and method of manufacturing the same

An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a device substrate and a handle substrate. The device substrate has a first surface and a second surface opposite to each other, and a bevel disposed between the first and the second surfaces. The handle substrate is bonded to the second surface of the device substrate, wherein the oxygen content of the device substrate is less than the oxygen content of the handle substrate, and a bonding angle greater than 90&#xb0; is between the bevel of the device substrate and the handle substrate.

A bonded substrate for epitaxial growth and a method for forming the same are disclosed. The method includes steps of providing a first substrate, which has a first dopant concentration; providing a second substrate, which has a second dopant concentration, wherein the second dopant concentration is lower than the first dopant concentration; directly bonding a first surface of the first substrate with a second surface of the second substrate to form a bonded substrate; annealing the bonded substrate to form a high impedance layer in the bonded substrate; and removing part of the second substrate to expose the high impedance layer depending on the requirements whereby, the bonded substrate formed by the method could have a heavily doped substrate which includes a stronger strength and the impedance layer formed thereon, which could effectively increase the substrate strength, reduce the leakage current, and sustains a higher breakdown voltage.

Bonded substrate for epitaxial growth and method of forming the same

A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.

Semiconductor substrate and manufacturing method thereof

An epitaxial substrate and a method of manufacturing the same are provided. The epitaxial substrate includes a handle substrate, a heat dissipation layer on the handle substrate, a high-resistance silicon substrate on the heat dissipation layer, and a III-V semiconductor layer grown on the high-resistance silicon substrate. The heat dissipation layer has high thermal conductivity. The high-resistance silicon substrate has a resistance more than 100 ohm&#xb7;cm. Diameters of the high-resistance silicon substrate and the III-V semiconductor film are smaller than a diameter of the handle substrate, such that the epitaxial substrate is a convex substrate.

Epitaxial substrate and method of manufacturing the same

A nanostructured chip includes a substrate and a nanostructured layer, wherein the substrate has a first surface and a second surface on which the nanostructured layer is formed. A method of producing the nanostructured chip includes the step of forming the nanostructured layer on the second surface of the substrate. Whereby, the nanostructured layer effectively disperses a stress to increase the flexural strength of the nanostructured chip. Therefore, during the subsequent procedures to form an epitaxial layer on the first surface, the nanostructured layer is helpful to prevent the epitaxial layer from generating cracks, and prevent the substrate from bowings, or fragments.

Nanostructured chip and method of producing the same

A method for manufacturing an isolating layer onto a crucible includes the steps as follows: providing a spraying device for the following spraying steps; heating the crucible and measuring the heated crucible to get a first temperature; spraying a slurry on the inner wall of the crucible to form an isolating layer by a spraying unit with a predetermined spraying manner; measuring the isolating layer to get a second temperature; obtaining a value for the difference between the first and second temperatures and judging whether the difference value in a within predetermined difference scope or not, in which the predetermined difference scope is about 6&#xb0; C.&#x2dc;12&#xb0; C.; when the difference value is not in the predetermined difference scope, adjusting the predetermined spraying manner; when the difference value is in the predetermined difference scope, implementing the above spraying steps to the crucible.

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Hsinchu, Taiwan

Chun-I Fan