Siliconware Precision Industries Co., Ltd.

Chun-Hung Lu

Po-Yi Wu

Hui-Chuan Lu

Chieh-Lung Lai

Mao-Hua Yeh

Guang-Hwa Ma

Cheng-Yi Chen

Chi-Hsin Chiu

Ching-Wen Chiang

Kuang-Hsin Chen

Pin-Cheng Huang

Hsiao-Chun Huang

Chun-Hung Lin

Chung-Te Yuan

Huei-Nuan Huang

Chun-Chieh Chao

Lung-Shan Chuang

Tzung-Yen Wu

Wen-Kuang Wu

Tsung-Te Yuan

A method for fabricating a substrate having an electrical interconnection structure is provided, which includes the steps of: providing a substrate body having a plurality of conductive pads and first and second passivation layers sequentially formed on the substrate body and exposing the conductive pads; forming a seed layer on the second passivation layer and the conductive pads; forming a first metal layer on each of the conductive pads, wherein the first metal layer is embedded in the first and second passivation layers without being protruded from the second passivation layer; and forming on the first metal layer a second metal layer protruded from the second passivation layer. As such, when the seed layer on the second passivation layer is removed by etching using an etchant, the etchant will not erode the first metal layer, thereby preventing an undercut structure from being formed underneath the second metal layer.

Fabrication method of substrate having electrical interconnection structures

The disclosure provides an electronic package and a method of manufacturing the same. The method is characterized by encapsulating an electronic component with a packaging layer and forming on an upper surface of the packaging layer a circuit structure that is electrically connected to the electronic component; and forming a stress-balancing layer on a portion of the lower surface of the packaging layer to balance the stress exerted on the upper and lower surfaces of the packaging layer, thereby reducing the overall package warpage and facilitating the manufacturing process.

Method for manufacturing electronic package

A semiconductor package is provided, which includes: a circuit structure having a first bottom surface and a first top surface opposite to the first bottom surface; at least a semiconductor element disposed on the first top surface of the circuit structure and electrically connected to the circuit structure; an encapsulant formed on the first top surface of the circuit structure to encapsulate the semiconductor element, wherein the encapsulant has a second bottom surface facing the first top surface of the circuit structure and a second top surface opposite to the second bottom surface; and a strengthening layer formed on the second top surface of the encapsulant, or formed between the circuit structure and the encapsulant, or formed on the first bottom surface of the circuit structure, thereby effectively preventing the encapsulant from warping and the semiconductor element from cracking.

Fabrication method of semiconductor package

Electronic package and method for manufacturing the same

An electronic package is provided, including a circuit portion, an electronic element disposed on the circuit portion and a lid member disposed on the circuit portion to cover the electronic element. A separation portion is formed between the lid member and the electronic element. The lid member facilitates to prevent warping of the overall package structure. The invention further provides a method for fabricating the electronic package.

Electronic package and fabrication method thereof

Substrate having electrical interconnection structures and fabrication method thereof

Semiconductor package and fabrication method thereof

A method for fabricating an interposer is provided, which includes the steps of: providing a substrate body having a chip mounting side and an opposite external connection side and a plurality of conductive through holes communicating the chip mounting side and the external connection side, wherein the chip mounting side of the substrate body is covered with a protection layer; performing a singulation process on the external connection side of the substrate body; bonding the substrate body to a carrier via the external connection side thereof; removing the protection layer; and removing the carrier to form a plurality of interposers, thereby simplifying the fabrication process and improving the product yield.

Method for fabricating an interposer

An interconnection structure for a package is disclosed. The interconnection structure includes a substrate body having a conductive portion formed on a surface thereof; a first photosensitive dielectric layer formed on the surface of the substrate body and having a via for exposing the conductive potion; a conductive via formed in the via; a second photosensitive dielectric layer formed on the first photosensitive dielectric layer and having a opening for exposing the conductive via and a portion of the first photosensitive dielectric layer; and a conductive trace layer formed in the opening of the second photosensitive dielectric layer so as to be electrically connected to the conductive portion through the conductive via, thereby simplifying the fabrication process and reducing the fabrication cost and time.

Interconnection structure for package and fabrication method thereof

A semiconductor substrate is provided, including: a substrate; a plurality of conductive through vias embedded in the substrate; a first dielectric layer formed on the substrate; a metal layer formed on the first dielectric layer; and a second dielectric layer formed on the metal layer. As such, when a packaging substrate is disposed on the second dielectric layer, the metal layer provides a reverse stress to balance thermal stresses caused by the first and second dielectric layers, thereby preventing warpage of the semiconductor substrate.

Semiconductor substrate and method of fabricating the same

An inner-layer heat-dissipating board and a multi-chip stack package structure having the inner-layer heat-dissipating board are disclosed. The inner-layer heat-dissipating board includes a metal board body formed with a plurality of penetrating conductive through holes each comprising a plurality of nano wires and an oxidative block having nano apertures filled with the nano wires. The multi-chip stack package structure includes a first chip and an electronic component respectively disposed on the inner-layer heat-dissipating board to thereby facilitate heat dissipation in the multi-chip stack structure as well as increase the overall package rigidity.

Inner-layer heat-dissipating board, multi-chip stack package structure having the inner layer heat-dissipating board and fabrication method thereof

Growing community of inventors

Taichung, Taiwan

Chun-Hung Lu