Taiwan Semiconductor Manufacturing Comp. Ltd.

Chun-Hung Kung

Chi-Hung Liao

Yi-Ming Dai

Chi-Kang Chang

Shao-Chi Wei

Wei-Yu Su

Chian-Hun Lai

Chia-Hsien Chen

Hao-Zhang Lai

Shan-Chan Suc

Wei-Lian Lin

The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.

Anti-ESD photomask and method of forming the same

A method for photolithography in semiconductor manufacturing includes providing one or more masks for a wafer; defining a reference focus plane of a first mask of the one or more masks; defining a reference focus plane of a second mask of the one or more masks; and determining the best focus for the second mask based on the best focus of the first mask and the Z direction difference of the first and second masks, using the reference focus planes of the first and second masks.

System and method for photolithography in semiconductor manufacturing

A method is disclosed for repairing an opaque defect on a mask substrate. After examining one or more opaque patterns in a predetermined area of the mask substrate, at least one opaque defect in the opaque patterns is identified based on a difference between its light reflection rate and a reference reflection rate. A residue height of the opaque defect is further determined based on its light transmission rate, and a repair formula such as an etching dosage is devised based on the determined residue height.

Method for repairing opaque defects on semiconductor mask reticles

A new method is provided for the repair of a Phase Shifter Mask. The phase shifter of the PSM has been created over the active surface of the mask as a pattern of phase shift material, the pattern of phase shift material comprises at least one faulty element. A layer of photoresist is deposited over the active surface of the mask. A backside exposure of the PSM is performed in order to define the pattern of the mask in the layer of photoresist. The layer of photoresist is developed and remains in place over the pattern of the mask, protecting the phase shifter of the mask during repairs of the PSM. Repairs of the mask are performed using Focused Ion Beam techniques for this repair. A plasma etch removes Ga stain from the surface of the quartz substrate. The developed layer of photoresist is then removed from the pattern of the PSM using a wet strip process.

Method of repairing PSM to keep normal transmission rate and phase angle

Methods for a die to die and a die to database inspection of phase shifting masks is described. A layer of partially transmitting material, such as an anti-reflection coating, is formed on the mask covering the phase shifting mask elements. The mask is then illuminated by a light source and the light transmitted through the mask is detected. Defects in the pattern of phase shifting mask elements will cause a difference in the amount of light transmitted through the defect when compared to a defect free phase shifting mask element. This difference can be used to perform a die to die inspection or a die to database inspection of the pattern of phase shifting mask elements.

Growing community of inventors

Hsinchu, Taiwan

Chun-Hung Kung