Phoenix Pioneer Technology Co., Ltd.

Advanced Semiconductor Engineering, Inc.

Chun-Hsien Yu

Shih-Ping Hsu

Pao-Hung Chou

Hsien-Ming Tsai

Tung-Yao Kuo

You-Lung Yen

Chu-Chin Hu

Wen-Chang Chen

Chi-Feng Peng

A flip-chip packaging substrate and a method for fabricating the same are disclosed. The method includes stacking a plurality of insulating layers having conductive posts in a manner that the conductive posts are stacked on and in contact with one another. The insulating layers and the conductive posts serve as a core layer structure of the flip-chip packaging substrate. As such, the conductive posts having small-sized end surfaces can be fabricated according to the practical need. Therefore, when the thickness of the core layer structure is increased, the present disclosure not only increases the rigidity of the flip-chip packaging substrate so as to avoid warping, but also ensures the design flexibility of the small-sized end surfaces of the conductive posts, allowing high-density electrical connection points and fine-pitch and high-density circuit layers to be fabricated on the core layer structure.

Method of fabricating a flip-chip package core substrate with build-up layers

An inductance structure is provided and includes a plurality of inductance traces embedded in an insulating body and at least one shielding layer that is embedded in the insulating body and free from being electrically connected to the inductance traces. The shielding layer has a plurality of line segments that are free from being connected to one another. The shielding layer shields the inductance traces to improve the inductance value and quality factor.

Inductance traces protected through shielding layers

A package substrate and method of manufacturing a package substrate and a semiconductor device package are provided. The package substrate includes a circuit layer, a molding layer and a sacrificial layer. The circuit layer includes conductive traces and conductive pads. The molding layer has an upper surface and a lower surface opposite to the upper surface, wherein the molding layer partially covers the conductive traces and the conductive pads, and first surfaces of the conductive traces and first surfaces of the conductive pads are exposed from the upper surface of the molding layer. The sacrificial layer covers the lower surface of the molding layer, second surfaces of the conductive pads.

Package substrate and method for manufacturing the same

A semiconductor package device includes a flexible carrier, a first chip, a second chip, a first molding layer, a first adhesive layer and a second molding layer. The flexible carrier has a flexible layer and a rigid layer. The flexible layer has a patterned build-up circuit. The rigid layer is connected to a portion surface of the flexible layer. The position that the flexible layer connected to the rigid layer is formed a first carrying part and a second carrying part. The region of the flexible layer between the first carrying part and the second carrying part without the rigid layer is formed as a first flexible part. The first chip is connected to the first carrying part by flip-chip manner and the second chip is connected to the second carrying part by flip-chip manner. The first molding layer covers the first chip and the second molding layer covers the second chip. The first adhesive layer is connected between the first molding layer and the second carrying part.

Semiconductor package device

This disclosure provides a package substrate including: a first dielectric layer formed of a first molding compound; a first conductive wire and a first conductive channel disposed in the first dielectric layer; a second dielectric layer formed of a second molding compound; a second conductive wire and a second conductive channel disposed in the second dielectric layer; a third dielectric layer formed of a third molding compound; a third conductive wire and a third conductive channel disposed in the third dielectric layer; a fourth dielectric layer formed of a fourth molding compound; a fourth conductive wire, a fourth conductive channel and a circuit device disposed in the fourth dielectric layer; wherein, a first empty region, a second empty region, a third empty region and a fourth empty region are formed in the first, second, third and fourth dielectric layers, respectively, and the empty regions are vertically overlapped.

Package substrate

A semiconductor packaging substrate is provided and includes: an insulating layer, a thinned circuit structure formed of circuit layers and conductive posts stacked on one another embedding in the insulating layer, and a supporting structure formed on the insulating layer and having at least one through hole exposing the conductive posts. As such, before a subsequent packaging operation, the packaging substrate can be electrically tested and screened so as to prevent a defective packaging substrate from being misused in the subsequent packaging operation and hence avoid the loss of normal electronic elements. A method for fabricating a semiconductor packaging substrate and a packaging process using the semiconductor packaging substrate are also provided.

Semiconductor packaging substrate, fabrication method and packaging process thereof

Flip-chip packaging substrate and method for fabricating the same

A semiconductor package substrate, a method for fabricating the same, and an electronic package having the same are provided. The method includes: providing a circuit structure having a first solder pad and a second solder pad; forming on the circuit structure a metal sheet having a first hole, from which the first solder pad is exposed, and a second hole, from which the second solder pad is exposed; and forming an insulation layer on the metal sheet and a hole wall of the second hole. A first conductive element that is to be grounded is disposed in the first hole and is in contact with the metal sheet and the first solder pad. Therefore, heat generated in a signal transmission process is dissipated by the metal sheet and the first conductive element.

Semiconductor package substrate having heat dissipating metal sheet on solder pads, method for fabricating the same, and electronic package having the same

A semiconductor package carrier board, a method for fabricating the same, and an electronic package having the same are provided. The method includes forming on a circuit structure a graphene layer that acts as an insulation heat dissipating layer. Since the heat conductivity of the graphene layer is far greater than the heat conductivity of ink (about 0.4 W/m&#xb7;k), which is used as solder resist, the heat of the semiconductor package carrier board can be conducted quickly, and thus can avoid the problem that the heat will be accumulated on the semiconductor package carrier board.

Semiconductor package carrier board, method for fabricating the same, and electronic package having the same

A semiconductor packaging substrate and a method for fabricating the same are provided. The method includes forming a solder resist structure having a hole on a circuit structure, with a portion of the circuit structure exposed from the hole, and forming a cup-shaped solder stand on the exposed circuit layer and a hole wall of the hole. During a packaging process, the design of the solder stand increases a contact area of a solder tin ball with a metal material. Therefore, a bonding force between the solder tin ball and the solder stand is increased, and the solder tin ball can be protected from being broken or fell off. An electronic package having the semiconductor packaging substrate and a method for fabricating the electronic package are also provided.

Semiconductor package substrate, electronic package and methods for fabricating the same

A flip-chip package substrate and a method for fabricating the same are provided. An insulation layer is formed on two opposing sides of a middle layer to form a composite core structure and increase the rigidity of the flip-chip package substrate. Therefore, the core structure can be made thinner. The conductive structures can also have a smaller end size, and more conductive points can be disposed within a unit area. Therefore, a circuit structure can be produced that have a fine line pitch and a high wiring density, satisfy the packaging demands of highly integrated circuit/large size substrate, and avoid an electronic package from being warpage.

Flip-chip package substrate and method for fabricating the same

A flip-chip package substrate and a method for preparing the same in accordance with the present disclosure includes stacking a reinforcement layer on two opposing sides of a middle layer in order to increase the rigidity of the flip-chip package substrate, and promoting a thin middle layer, wherein the sizes of the end faces of conductive portions can be minimized according to needs. This increases the number of electrical contacts possible in a unit area and enables the creation of finer line pitch and higher layout density of the circuit portions, thereby satisfying the need for packaging of high integration/large scale chips while preventing warpage from occurring in the electronic packages.

Flip-chip package substrate and method for preparing the same

This disclosure provides a package substrate fabrication method including: providing a carrier; forming a first dielectric layer on the carrier while enabling the first dielectric layer to be patterned including an opening; forming a first conducting unit on the carrier while enabling the first conducting unit to fill up the opening, a height of the first conducting unit at the opening larger than a thickness of the first dielectric layer, and a width of the first conducting unit larger than a width of the opening; forming a second dielectric layer on the first conducting unit; forming a second conducting unit on the second dielectric layer; forming a third dielectric layer on the second conducting unit; removing the carrier and the first dielectric layer while enabling the part of the first conducting unit in the opening to be removed; and forming a fourth dielectric layer to cover the first conducting unit.

Method of fabricating package substrates

The present disclosure provides an electronic package, including a package substrate and an electronic component formed on the package substrate. The substrate includes an insulating portion, a wiring portion embedded in the insulating portion, and a metal board disposed on the insulating portion and in contact with the wiring portion. The metal board is provided with a plurality of electrical contacts and a heat dissipating portion. The metal board can maintain a predefined heat dissipation area via the heat dissipating portion, and be connected to a circuit board via the electrical contacts.

Electronic package and its package substrate

This disclosure provides a package substrate and its fabrication method. The package substrate comprises: a first dielectric material layer have an opening; a first conductive unit including a first part in the opening of the first dielectric material layer and a second part on the first dielectric material layer; and a second dielectric material layer covering the first conductive unit and the first dielectric material layer; wherein a height of the first conductive unit is larger than a thickness of the first dielectric material layer; wherein a cross-section of the second part is larger than that of the first part in the first conductive unit.

Growing community of inventors

Hsinchu County, Taiwan

Chun-Hsien Yu