Asm IP Holding B.v.

Chuang Wei

Xing Lin

Wentao Wang

Peipei Gao

Fei Wang

Bubesh Babu Jotheeswaran

Alexandros Demos

Mingyang Ma

Prajwal Nagaraj

Aditya Walimbe

Rajeev Reddy Kosireddy

Woo Jung Shin

Yen Chun Fu

Amin Azimi

Aditya Chaudhury

Prahlad Kulkarni

Qu Jin

Xiaoda Sun

A coating and a method to form the coating is proposed for a semiconductor film pre-clean and etch apparatus. The coating may be employed in environments where it is difficult to use a traditional coating or coating method. The coatings provide advantages including: an ability to effectively deliver hydrogen radicals and fluorine radicals to a wafer surface in one apparatus or individually in two apparatuses; a coverage of high aspect ratio features on critical components; an operability in high temperatures exceeding 150° C.; and a protection of a part with high aspect ratio features underneath the coating, thereby preventing metal and particles on a processed wafer.

High temperature coatings for a preclean and etch apparatus and related methods

A system and method suitable for removing both carbon-based contaminants and oxygen-based contaminants from a substrate within a single process chamber are disclosed.

Apparatus for use with hydrogen radicals and method of using same

In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.

Semiconductor processing preclean methods and apparatus

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Chandler, AZ, United States of America

Chuang Wei