Taiwan Semiconductor Manufacturing Comp. Ltd.

Chuan-Yuan Lin

Chin-Hsiang Lin

Chang-Cheng Hung

Tyng-Hao Hsu

Chih Cheng Chin

Chang Cheng Hung

Shin-Ying Chen

Shu-Chun Lin

Chin Hsiang Lin

A progressive self-learning (PSL) method is provided for enhancing wafer or mask defect inspection review and classification by identifying a plurality of wafer or mask defects, and by classifying each of the plurality of defects according to an extent of resemblance of each defect. The method having the steps of: performing image processing on a scanned defect image; aligning the scanned defect image with a just-stored digitized defect image; matching the scanned defect image with a just-stored digitized defect image; and classifying the scanned defect image.

Progressive self-learning defect review and classification method

A back-end method for photomask making generally includes the steps of inspecting a photomask and repairing each defect on the photomask. The step of inspecting the photomask preferably comprises a defect finder mark implementation routine. In general, when inspecting the photomask for defects, the defect finder mark implementation routine deposits a defect finder mark on the photomask via a mark installer (not shown) included with a mask marking inspection system. Deposition of the defect finder mark includes establishing a location that is adjacent to the defect and establishing a size that is detectable by a mask repair device (not shown). By deposition on the photomask, the defect finder mark reliably facilitates location of the corresponding defect despite variations in image resolution and stage movement between the mask marking inspection system and the mask repair device.

Method for applying a defect finder mark to a backend photomask making process

The use of dual-focused ion beams for semiconductor image scanning and mask repair is disclosed. A mask is imaged with either a focused negative ion beam, such as a focused oxygen ion beam, or a focused positive ion beam, such as a focused gallium ion beam. Mask imaging is also referred to as image scanning. Defects in the mask are repaired with the ion beam not used in imaging of the mask. Also disclosed is image scanning being performed with the focused negative ion beam to neutralize potential charge buildup, and mask repair being performed with the focused positive ion beam. An apparatus is disclosed that has a negative ion mechanism supplying negative ions, a positive ion mechanism supplying positive ions, a filter to select the desired ratio of the negative to the positive ions, and an aiming mechanism to focus the ions onto the mask.

Dual-focused ion beams for semiconductor image scanning and mask repair

Growing community of inventors

Taichung, Taiwan

Chuan-Yuan Lin