Freescale Semiconductor,inc.

Nxp Usa, Inc.

Chu-Chung Lee

Kevin John Hess

Tu-Anh N Tran

Leo M Higgins, Iii

Burton Jesse Carpenter

James W Miller

Varughese Mathew

Yaping Zhou

Robert Joseph Wenzel

Sheila F Chopin

Heng Keong Yip

James Patrick Johnston

Kian Leong Chin

Richard Eguchi

Lan Chu Tan

Peter R Harper

William M Williams

Yuan Yuan

Chin Teck Siong

Min Ding

Fuaida Harun

Peng Su

Cheng Choi Yong

Yin Kheng Au

Jia Lin Yap

Meijiang Song

Lois E Yong

Patrick Johnston

John G Arthur

Matthew J Zapico

Donna Woosley, Legal Representative

Kevin J Hess

The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.

Surface finish for wirebonding

An integrated circuit wire bond connection is provided having an aluminum bond pad () that is directly bonded to a copper ball () to form an aluminum splash structure () and associated crevice opening () at a peripheral bond edge of the copper ball (), where the aluminum splash structure () is characterized by a plurality of geometric properties indicative of a reliable copper ball bond, such as lateral splash size, splash shape, relative position of splash-ball crevice to the aluminum pad, crevice width, crevice length, crevice angle, and/or crevice-pad splash index.

Copper ball bond features and structure

An electronic component package that includes a package substrate having an aluminum bond pad formed from an aluminum clad copper structure. The aluminum clad copper structure is attached to a dielectric layer. An electronic component is attached to the substrate and includes a conductive structure electrically coupled to the aluminum bond pad. The aluminum bond pad, the electronic component, and at least a portion of the substrate are encapsulated with an encapsulant.

Aluminum clad copper structure of an electronic component package and a method of making an electronic component package with an aluminum clad copper structure

An electronic component package includes a substrate and dielectric structure. The dielectric structure includes a top surface having a protrusion portion and a lower portion. The protrusion portion is located at first height that is greater than a second height of the lower portion. A conductive bond pad is located over the dielectric structure. A ball bond electrically couples the bond pad and a bond wire. An intermetallic compound located between the ball bond and bond pad is formed of material of the ball bond and bond pad and electrically couples the bond pad to the ball bond. A portion of the bond pad is vertically located between a portion of the lower portion of the top surface of the dielectric structure and the intermetallic compound. No portion of the bond pad is vertically located between at least a portion of the protrusion portion and the intermetallic compound.

Electronic component package and method for forming same

A semiconductor device includes a bond formed on a bond pad. The bond is formed of a wire that includes a central core of conductive metal, a first coating over the central core of conductive metal that is more chemically active than the conductive metal, and a second coating over the central core of conductive metal that is less chemically active than the central core of conductive metal.

Coated bonding wire and methods for bonding using same

An integrated circuit package includes a semiconductor die attached to a package support. The die has a plurality of peripheral bond pads along a periphery of the die and a first bond pad on an interior portion of the die wherein the first bond pad is a power supply bond pad. A conductive distributor is over the die and within a perimeter of the die and has a first opening. The plurality of bond pads are located between the perimeter of the die and a perimeter of the conductive distributor. The first bond pad is in the first opening. A first bond wire is connected between the first bond pad and the conductive distributor. A second bond wire is connected between a first peripheral bond pad of the plurality of peripheral bond pads and the conductive distributor.

Integrated circuit package with voltage distributor

Methods of forming gold-aluminum electrical interconnects are described. The method may include interposing a diffusion retardant layer between the gold and the aluminum, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material; bringing into contact the diffusion retardant layer, the gold, and the aluminum; forming alloys of gold and the diffusion retardant material in regions containing the material and forming gold-aluminum intermetallic compounds in regions substantially devoid of the material; and forming a continuous electrically conducting path between the aluminum and the gold. A structure for gold-aluminum interconnect is provided. The structure may include an aluminum alloy bond pad and a diffusion retardant layer in contact with the bond pad, the diffusion retardant layer including regions containing and regions substantially devoid of a diffusion retardant material. The structure may include a gold free air ball in contact with the diffusion retardant layer.

Localized alloying for improved bond reliability

A semiconductor structure includes a bond pad and a wire bond coupled to the bond pad. The wire bond includes a bond in contact with the bond pad. The wire bond includes a coating on a surface of the wire bond, and a first exposed portion of the wire bond in a selected location. The wire bond is devoid of the coating over the selected location of the wire bond, and an area of the first exposed portion is at least one square micron.

Structures for reducing corrosion in wire bonds

An integrated circuit copper wire bond connection is provided having a copper ball () bonded directly to an aluminum bond pad () formed on a low-k dielectric layer () to form a bond interface structure for the copper ball characterized by a first plurality of geometric features to provide thermal cycling reliability, including an aluminum minima feature (Z1, Z2) located at an outer peripheral location () under the copper ball to prevent formation and/or propagation of cracks in the aluminum bond pad.

Copper ball bond interface structure and formation

A mold compound is provided for encapsulating a semiconductor device (). The mold compound comprises at least approximately 70% by weight silica fillers, at least approximately 10% by weight epoxy resin system, and beneficial ions that are beneficial with respect to copper ball bond corrosion. A total level of the beneficial ions in the mold compound is at least approximately 100 ppm.

Encapsulant for a semiconductor device

A semiconductor device includes an integrated circuit die on a substrate. A first subset of wire bonds is between the substrate and the die. A second subset of wire bonds is between the substrate and the die. A dielectric material coats the first subset of the wire bonds along a majority of length of the first subset of the wire bonds. A medium is in contact with the second subset of the wire bonds along a majority of length of the second subset of the wire bonds.

Packaged integrated circuit using wire bonds

An integrated circuit is attached to a package substrate. The integrated circuit is electrically connected to the package substrate using a plurality of bond wires connected between a plurality of bond posts and a plurality of bond pads. A first plurality of the bond pads are along a first side of the integrated circuit and coupled to a first plurality of the bond posts with a first plurality of the bond wires. A second plurality of the bond pads are along a second side of the integrated circuit and coupled to a second plurality of the bond posts with a second plurality of the bond wires. Mold compound is injected through a plurality of openings in the package substrate. A first opening is between the first plurality of bond posts and the first side. A second opening is between the second plurality of bond posts and the second side.

Growing community of inventors

Round Rock, TX, United States of America

Chu-Chung Lee