Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Christopher W Campbell

Costel Biloiu

Frank Sinclair

Vikram Singh

Robert C Lindberg

Richard John Hertel

Kevin M Daniels

Shurong Liang

Tyler Burton Rockwell

Joseph C Olson

Alexandre Likhanskii

Peter F Kurunczi

Kenneth Harry Purser

Shengwu Chang

Jay R Wallace

Glen F R Gilchrist

Bon-Woong Koo

Craig Richard Chaney

Eric D Hermanson

Alexander S Perel

Wilhelm P Platow

Piero Sferlazzo

Tsung-Liang Chen

Alexander C Kontos

Glen Gilchrist

Kevin T Ryan

Alex Kontos

Ludovic Godet

Dmitry Lubomirsky

John J Hautala

Morgan Evans

Victor M Benveniste

Svetlana Radovanov

Simon Ruffell

Kevin R Anglin

Piotr R Lubicki

Antonella Cucchetti

Daniel Distaso

Joseph Frederick Sommers

Ernest Everett Allen

Adam Calkins

Nevin H Clay

Alan V Hayes

David Roger Timberlake

Appu Naveen Thomas

Minab B Teferi

Richard J Hertel

Tyler Rockwell

A method may include receiving a beam profile function, derived from a beam density of an ion beam along a substrate plane, and generating a mirror function, based upon the beam profile function, wherein a sum of the mirror function and beam profile function generates a flat beam distribution. The method may include receiving a grid pattern for an electrode of an electrode assembly, the grid pattern comprising an array of hole locations, and calculating a normalized beam current as a function hole location for the array of hole locations. The method may further include generating an adjusted set of radii as a function of hole location for the array of hole locations based upon the mirror function and the normalized beam current, and generating an electrode assembly having an array of holes, based upon the grid pattern and the adjusted set of radii.

Ion extraction optics having non uniform grid assembly

A processing system may include a plasma chamber and an extraction optics, disposed along a side of the plasma chamber. The extraction optics may include an extraction plate, having an outer side and an inner side, where the extraction plate defines at least one extraction aperture. The extraction optics may include a beam blocker, overlapping the at least one extraction aperture, and disposed towards the inner side of the extraction plate. The beam blocker may have a cross-section that defines a boomerang shape, and may comprise a first metallic material, where the extraction plate comprises a second metallic material. The processing system may further include a substrate platen, disposed outside of the plasma chamber, and movable along a scan direction with respect to the extraction aperture.

Ion extraction optics having novel blocker configuration

A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

Substrate halo arrangement for improved process uniformity

A processing system may include a plasma chamber operable to generate a plasma, and an extraction assembly, arranged along a side of the plasma chamber. The extraction assembly may include an extraction plate including an extraction aperture, the extraction plate having a non-planar shape, and generating an extracted ion beam at a high angle of incidence with respect to a perpendicular to a plane of a substrate, when the plane of the substrate is arranged parallel to the side of the plasma chamber.

Apparatus and system including high angle extraction optics

A system and method for controlling an amount of outgassing caused by implanting ions into a photoresist disposed on a workpiece. The amount of outgassing is based on the species being implanted, the type of photoresist, the energy of the implant, and the amount of dose that has already been implanted, among other effects. By controlling the effective beam current, the amount of outgassing may be maintained below a predetermined threshold. By developing and utilizing the relationship between effective beam current, dose completed and rate of outgassing, the effective beam current may be controlled more precisely to implant the workpiece in the most efficient manner while remaining below the predetermined outgassing threshold.

Real time photoresist outgassing control system and method

An extraction plate for an ion beam system. The extraction plate may include an insulator body that includes a peripheral portion, to connect to a first side of a plasma chamber, and further includes a central portion, defining a concave shape. As such, an extraction aperture may be arranged along a first surface of the central portion, where the first surface is oriented at a high angle with respect to the first side. The extraction plate may further include a patterned electrode, comprising a first portion and a second portion, affixed to an outer side of the insulator body, facing away from the plasma chamber, wherein the first portion is separated from the second portion by an insulating gap.

An ion beam processing apparatus may include a plasma chamber, and a plasma plate, disposed alongside the plasma chamber, where the plasma plate defines a first extraction aperture. The apparatus may include a beam blocker, disposed within the plasma chamber and facing the extraction aperture. The apparatus may further include a non-planar electrode, disposed adjacent the beam blocker and outside of the plasma chamber; and an extraction plate, disposed outside the plasma plate, and defining a second extraction aperture, aligned with the first extraction aperture.

Apparatus and system having extraction assembly for wide angle ion beam

Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

High-current ion implanter and method for controlling ion beam using high-current ion implanter

A workpiece processing apparatus allowing in situ cleaning of metal deposited formed on the extraction plate and in the plasma chamber is disclosed. The apparatus includes an extraction plate having an extraction aperture through which the sputtering material is passed. The apparatus also includes a sealed volume disposed within the plasma chamber which is in communication with a cleaning aperture on the extraction plate. The sealed volume is in communication with a cleaning gas, which is excited by the plasma in the plasma chamber, and can be used to clean the exterior surface of the extraction plate. The feed gas used in the plasma chamber can be selected from a sputtering species and the cleaning gas. Since the volume in the sealed volume is separated from the rest of the plasma chamber, the cleaning of the extraction plate and the cleaning of the plasma chamber may be performed independently.

Apparatus and method for differential in situ cleaning

Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

Conductive beam optics for reducing particles in ion implanter

In one embodiment, an apparatus to treat a substrate may include an extraction plate to extract a plasma beam from a plasma chamber and direct the plasma beam to the substrate. The plasma beam may comprise ions forming a non-zero angle of incidence with respect to a perpendicular to a plane of the substrate; and a gas outlet system disposed outside the plasma chamber, the gas outlet system coupled to a gas source and arranged to deliver to the substrate a reactive gas received from the gas source, wherein the reactive gas does not pass through the plasma chamber.

Apparatus and techniques to treat substrates using directional plasma and point of use chemistry

Conductive beam optic containing internal heating element

A system for implanting ions into a workpiece while minimizing the generation of particles is disclosed. The system includes an ion source having an extraction plate with an extraction aperture. The extraction plate is electrically biased and may also be coated with a dielectric material. The workpiece is disposed on a platen and surrounded by an electrically biased shield. The shield may also be coated with a dielectric material. In operation, a pulsed DC voltage is applied to the shield and the platen, and ions are attracted from the ion source during this pulse. Since a pulsed voltage is used, the impedance of the thin dielectric coating is reduced, allowing the system to function properly.

Low particle capacitively coupled components for workpiece processing

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Radio frequency extraction system for charge neutralized ion beam

Growing community of inventors

Newburyport, MA, United States of America

Christopher W Campbell