International Business Machines Corporation

Globalfoundries Inc.

Suss Microtec Photonic Systems Inc.

Suss Microtec Inc.

Christopher Lee Tessler

John Joseph Garant

Glen Nelson Biggs

John Peter Karidis

Thomas Weiss

Peter Alfred Gruber

Russell Alan Budd

Benjamin V Fasano

Michael Teich

Bouwe W Leenstra

Robert G Haas

Jerome D Cohen

Enrico Herz

Richard Paul Volant

David Louis Harame

Sarah Huffsmith Knickerbocker

Brian Michael Erwin

Nicholas A Polomoff

Ajay Prabhakar Giri

Phillip W Palmatier

John Chester Malinowski

Joseph Michael Sullivan

Jennifer D Schuler

Thomas Adam Bartush

Matthew E Souter

Jerry A Gorrell

Yuri M Brovman

Dawn Tudryn Piciacchio

Timothy Joseph Chainer

Richard Eugene Anderson

Richard Francis Indyk

Kevin M Prettyman

Shahid Ahmad Butt

Dennis G Manzer

Dale Curtis McHerron

James Edward Tersigni

Kaushal S Patel

Sean A Allen

G Gerard Gormley

Doris P Pulaski

Valérie Anne Oberson

Vijay Sukumaran

Ralph R Comulada

Brittany L Hedrick

Stephen J Tirch, Iii

Luc Bélanger

Dawn J Tudryn

Disclosed are integrated circuit (IC) chip structures (e.g., radio frequency (RF) IC chip structures) and methods of forming the structures with an electrically insulative molding compound handler substrate. Each structure includes at least: an electrically insulative molding compound handler substrate; an insulator layer on the handler substrate; and one or more semiconductor devices (e.g., RF semiconductor devices) on the insulator layer. Each method includes at least: attaching a temporary carrier above back end of the line (BEOL) metal levels, which are over an interlayer dielectric layer covering one or more semiconductor devices; removing at least a portion of a semiconductor handler substrate, which is below the semiconductor device(s) and separated therefrom by an insulator layer; replacing the semiconductor handler substrate with a replacement handler substrate made of an electrically insulative molding compound; and removing the temporary carrier. The molding compound handler substrate provides backside isolation that prevents unwanted noise coupling.

Integrated circuit chip with molding compound handler substrate and method

The present disclosure relates to semiconductor structures and, more particularly, to dicing channels used in the singulatation process of interposers and methods of manufacture. The structure includes: one or more redistribution layers; a glass interposer connected to the one or more redistribution layers; a channel formed through the one or more redistribution layers and the glass interposer core, forming a dicing channel; and polymer material conformally filling the channel.

Dicing channels for glass interposers

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

Substrate including selectively formed barrier layer

A fill head apparatus includes at least one chamber for holding a fluid. The chamber has an outlet for expelling the fluid. A vacuum device has an inlet for a suction device adjacent to the fluid outlet. A plurality of flexible and resilient sealing devices contact a top surface of a workpiece. The sealing devices are positioned on opposing sides of the chamber outlet and on opposing sides of the vacuum device inlet, such that the sealing devices create at least a partial seal around a cavity defined by the workpiece and the cavity is beneath both the chamber outlet and the vacuum outlet.

Fill head interface with combination vacuum pressure chamber

Methods of removing material from a defective opening in a glass mold using a laser pulse, repairing a glass mold and a related glass mold for injection molded solder (IMS) are disclosed. In one embodiment, a method includes providing a glass mold including a plurality of solder filled openings; identifying a defective opening in the glass mold; removing material from the defective opening by applying a laser pulse to the defective opening; and repairing the defective opening by filling the defective opening with an amount of solder by: removing a redundant, non-defective solder portion from an opening in the glass mold by applying a laser pulse to the opening, and placing the redundant, non-defective solder portion in the defective opening.

Removing material from defective opening in glass mold

Removing material from defective opening in glass mold and related glass mold for injection molded solder

Techniques for dispensing fusible material onto a surface, wherein the fusible material is in molten form, are provided. In accordance with aspects of the invention, a dispensing assembly dispenses the fusible material and a gas environment surrounding a portion of a seal structure of the dispensing assembly is controlled to regulate an oxidation rate of the fusible material.

Dispensing assembly with a controlled gas environment

An apparatus for dispensing fusible material onto a surface, wherein the fusible material is in molten form, is provided. The apparatus comprises a dispensing assembly comprising a seal structure. The seal structure controls dispensing of the fusible material. One or more gas injectors are coupled to the dispensing assembly. Each of the one or more gas injectors is adapted to inject at least one gas to the dispensing assembly for controlling a gas environment surrounding at least a portion of the seal structure. An oxidation rate of the fusible material is controlled as a function of at least one characteristic of the at least one gas.

Dispensing assembly with an injector controlled gas environment

A method is provided for making of interconnect solder bumps on a wafer or other electronic device without depositing any significant amount of tin or other solder component from the solder onto the wafer surface which tin can cause shorts or other defects in the wafer. The method is particularly useful for well-known C4NP interconnect technology. In one aspect of the invention, a reducing gas flow rate is used to remove oxides from the solder surfaces and wafer pad surfaces and is of a sufficient determined or pre-determined flow and/or chamber or mold/wafer spacing to provide a gas velocity across the solder surfaces and wafer pad surfaces so that Sn or other contaminants do not deposit on the wafer surface during solder transfer. In another aspect, the transfer contact is performed below the melting point of the solder and subsequently heated to above the melting temperature while in transfer contact. The heated solder in contact with the wafer pads is transferred to the wafer pads.

Process for making interconnect solder Pb-free bumps free from organo-tin/tin deposits on the wafer surface

An air bearing gap control arrangement for injection molded solder filler heads. Also provided is a method of providing for a gap control for injection molded solder filler heads utilizing an air bearing arrangement. Provided is a C-ring seal, at the lower or dispensing region of the solder filler head structure, wherein the C-shape is open at the leading edge thereof. Hereby, a prevalent leading edge gap is tightly controlled by means of pressurized air in order to form an air bearing. Downstream of this leading edge is the molten solder, which is contained within a very narrow gap height between the solder filler head and the mold. As the solder fills the pits or recesses which are formed in the mold surface, air will rush out or be displaced from the pits towards the air bearing and is then expelled, while the deposited solder remains in place.

Air bearing gap control for injection molded solder heads

A new pressure-only molten metal valving apparatus and method is provided. This novel approach to controlling the flow of liquids eliminates the need for active, moving valve components. Using the natural surface tension properties of liquids, the gas pressure either activates liquid flow when a threshold is overcome or retains the liquid in a head, even when lifted.

Pressure-only molten metal valving apparatus and method

Disclosed is a new process that permits the transfer and reflow of solder features produced by Injection Molded Solder (IMS) from a mold plate to a solder receiving substrate without the use of flux. Several embodiments produce solder transfer and reflow separately or together and use either formic acid vapor or partial concentration of hydrogen, both in nitrogen, as the oxide reducing atmosphere. A final embodiment produces fluxless transfer and reflow in only nitrogen through the use of ultrasonic vibration between the solder filled mold plate and solder receiving substrate.

Fluxless solder transfer and reflow process

A method of forming a multichip module in which a thin film structure is formed on a temporary carrier and then an electrically insulating frame is attached to the thin film structure. A semiconductor device is attached to the thin film structure and then the temporary carrier is removed. Lastly, at least one semiconductor device is attached to the other side of the thin film structure. There is interconnectvity through the thin film structure between the semiconductor devices and the frame.

Method of forming a multichip module having chips on two sides

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Poughquag, NY, United States of America

Christopher Lee Tessler