Tel Epion Corporation

Other

Christopher K Olsen

Yan Shao

Martin D Tabat

Luis Fernandez

Ruairidh Maccrimmon

Charles Tomasino

Robert K Becker

Kenneth P Regan

Ruairidh MacCrimmon

Provided is a method of controlling a gas cluster ion beam (GCIB) system for processing structures on a substrate. A GCIB system comprises deflection plates for directing a GCIB towards a substrate, the GCIB system coupled to a substrate scanning device configured to move a substrate in three dimensions. The substrate is exposed to the GCIB while the substrate is being moved by the substrate scanning device. A controller is used to control a set of deflection operating parameters comprising a deflection angle &#x3c6;, voltage differential of the deflection plates, frequency of the deflection plate power, beam current, substrate distance, pressure in the nozzle, gas flow rate in the process chamber, separation of beam burns, duration of the bean burn, and/or duty cycle of the beam deflector output.

Method and apparatus for beam deflection in a gas cluster ion beam system

A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material.

Gas cluster ion beam etching process for etching Si-containing, Ge-containing, and metal-containing materials

A method for opening a conformal layer at the bottom of a contact via on a substrate is described. The method includes providing a substrate having a first layer with a via pattern formed therein and a second layer conformally deposited on the first layer and within the via pattern to establish a contact via pattern characterized by an initial mid-critical dimension (CD). The method further includes etching through the second layer at the bottom of the contact via pattern to extend the contact via pattern through the second layer and form a contact via while retaining at least part of the second layer on the top surface of the first layer, the corner at the entrance to the via pattern, and the sidewalls of the via pattern, wherein the etching is performed by irradiating the substrate with a gas cluster ion beam (GCIB) according to a GCIB etching process.

Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via

A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.

A method and system for performing gas cluster ion beam (GCIB) etch processing of metal-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Gas cluster ion beam etching process for metal-containing materials

A method and system for performing gas cluster ion beam (GCIB) etch processing of Si-containing material and/or Ge-containing material is described. In particular, the GCIB etch processing includes forming a GCIB that contains a halogen element.

Gas cluster ion beam etching process for Si-containing and Ge-containing materials

A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.

Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials

An improved golf putter featuring a two piece cylindrical clubhead comprising a rod constructed from a hard material and fastened inside a thin walled tube cast from soft, malleable material such as copper. The club and clubhead are designed so as to improve balance, efficiency, and feel, and to impart initial forward rotational spin to the golf ball. The shaft is connected to the clubhead in such a manner as to align the shaft with the center of the clubhead, thereby maximizing the size of the 'sweet spot,' and to create a lie angle of between 65 and 76 degrees.

Golf putter with cylindrical clubhead

A holster formed by two identical sandwiched blanks sewn together. The holster has an open front except for a low forward wall. The holster has an inner wall with a rigid upstanding thumb release and the holster has an outer wall with a flexible retaining strap and snap members releasably securing together the thumb release and the strap. The blanks in flat condition before being folded into a holster having a slotted ear at each end that are superposed and sewn together to form a rear holster ear to secure to a belt. In the flat condition of the blanks, the low forward wall connects together the inner and outer holster walls and a forward slotted holster ear extending from the inner holster wall, above the low forward wall, to secure to a belt. A metal liner sheet between the sandwiched blanks and extending substantially the complete area of the blanks except for the margins to be sewn together and except for the flexible retaining strap. The metal liner sheet extending throughout the areas of both ears and the upstanding thumb release.

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Peabody, MA, United States of America

Christopher K Olsen