Intel Corporation

Christopher G Parker

Robert S Chau

Matthew V Metz

Timothy E Glassman

Markus Kuhn

Ying Zhou

Suman Datta

Scott A Hareland

Reza Arghavani

Nick Lindert

Sunit Tyagi

Douglas W Barlage

Lawrence Foley

A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.

Method for making a semiconductor device having an ultra-thin high-k gate dielectric

A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate. After forming a silicon nitride layer on the high-k gate dielectric layer, a gate electrode is formed on the silicon nitride layer.

Method for making a semiconductor device having a high-k gate dielectric

A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.

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Portland, OR, United States of America

Christopher G Parker