International Business Machines Corporation

Clariant Finance (bvi) Limited

Christopher F Lyons

Robert Lavin Wood

Wayne Martin Moreau

Gary T Spinillo

Kevin Michael Welsh

Robert R Dichiara

Ratnam Sooriyakumaran

William R Brunsvold

James Thomas Fahey

George J Hefferon

Pamela E Jones

Ratnasabapathy Sooriyakumaran

Ranee W Kwong

Harbans S Sachdev

Willard E Conley

Robert Neal Lang

Stanley E Perreault

Ming-Fea Chow

Anthony F Scaduto

James A Jubinsky

Alexander D Lopata

Steve S Miura

Stanley A Ficner

Robert C McIntosh

Steven M Katz

Marina V Plat

John Magvas

Richard J Kvitek

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antireflective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Top antireflective coating film

A method is described for reducing linewidth variations in the patterning of photoresists having non-uniform film thickness, comprising overcoating the photoresist with sufficient thickness of a nonreactive coating composition having a refractive index which within .+-.15 percent of that of the refractive index of the photoreist composition; said overcoating being of sufficient thickness such that it will result in about a one wave length phase lag between the oblique rays and the normal incident rays reflecting back from the substrate, upon arriving back at the resist surface. The effective thickness of the overcoating is a function of the exposure wavelength and the size of the numerical aperture of the objective lens used for expose. The overcoating compositions capable of providing the so defined refractive indices ranges, are described. For example, a polyacrylic acid coating composition having a refractive index of 1.5 at a thickness of 2.0 .mu.m, provides a workable overcoating to reduce linewidth variations for a resist having a refractive index of 1.7 and a film thickness of 0.9-1.0 .mu.m.

Phase-averaging resist coating for reflectivity control

A method and composition for developing positive photoresists is illustrated. The developer of the present invention includes an ammonium hydroxide aqueous base and a surfactant of the fluorinated alkyl alkoxylate class most preferably present in an amount of from 10 to 30 ppm. A particularly preferred surfactant includes sulfonyl and amine moieties.

Method of developing positive photoresist and compositions therefor

Enhanced fidelity of pattern transfer of aqueous developable photoresist compositions is achieved with top antirefective coatings which are fluorine-containing and have a refractive index approximately equal to the square root of the underlying photoresist and which are removable in the developer for the photoresist.

Antireflective coating films

An antireflective coating composition for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-UV antireflection coatings and methods for use thereof

An antireflective coating composition (ARC) for use with chemically amplified photoresist compositions comprising a polymer composition which is highly absorbent to mid and deep UV radiation, which is substantially inert to contact reactions with a chemically amplified photoresist composition, and which is insoluble in the developer for the chemically amplified photoresist composition.

Mid and deep-uv antireflection coatings and methods for use thereof

Positive photoresist compositions which comprise an alkali soluble resin material, a diazoquinone dissolution inhibitor which decompose on exposure to mid and near UV radiation, and a sulfonic acid ester of an imide or oxime which does not absorb such mid or near UV radiation. Resist images of high contrast are formed.

Positive working photoresist composition containing mid or near UV

A protective material for use as an overcoating film for acid catalyzed resist compositions comprising a polymeric film forming compound, the films of which are impermeable to vapors of organic and inorganic bases.

Top coat for acid catalyzed resists

A PMGI bilayer resist for integrated circuit fabrication having increased sensitivity to light and formed by the addition of cyclic anhydrides to the resist and the formation of an accompanying bilayer resist structure of a portable conforming mask having a desirable undercut profile for lift-off of patterned metallic circuitry.

Resists with enhanced sensitivity and contrast

A process for setting the exposure speed of photolithography instruments is described, using a method of dosimetry based on photoactive compound bleaching of photoresist. A curve of light absorbance to exposure speed and a calibration curve of light absorbance to dose are determined for a photoresist. The exposure speed for any desired degree of resist bleaching can be set using the first curve, and the exposure speed for a predetermined dosage can be set by determining the common light absorbance value on the exposure speed and dosage curves.

Method for dose calculation of photolithography projection printers

Growing community of inventors

LaGrangeville, NY, United States of America

Christopher F Lyons